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| 型号： | NTMFS4833NT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 16A SO-8FL |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 16A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 58nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 5600pF @ 12V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TDFN 裸露焊盘（5 引线） |
| 供应商设备封装： | 6-DFN，8-SO 扁平引线（5x6） |
| 包装： | 标准包装 |
| 其它名称： | NTMFS4833NT3GOSDKR |
NTMFS4833N
Power MOSFET
30 V, 191 A, Single N ? Channel, SO ? 8FL
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? These are Pb ? Free Devices
http://onsemi.com
Applications
? Refer to Application Note AND8195/D
? CPU Power Delivery
? DC ? DC Converters
? Low Side Switching
V (BR)DSS
30 V
R DS(ON) MAX
2.0 m W @ 10 V
3.0 m W @ 4.5 V
D (5)
I D MAX
191 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
30
± 20
V
V
G (4)
Continuous Drain
Current R q JA
(Note 1)
Power Dissipation
R q JA (Note 1)
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
P D
28
20.5
2.7
A
W
S (1,2,3)
N ? CHANNEL MOSFET
MARKING
Continuous Drain
Current R q JA
(Note 2)
Power Dissipation
R q JA (Note 2)
Continuous Drain
Current R q JC
(Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T C = 25 ° C
T C = 85 ° C
ID
P D
I D
16
12
1.1
191
138
A
W
A
1
SO ? 8 FLAT LEAD
CASE 488AA
STYLE 1
S
S
S
G
DIAGRAM
D
4833N
AYWZZ
D
D
D
Power Dissipation
R q JC (Note 1)
Pulsed Drain
Current
T C = 25 ° C
T A = 25 ° C,
t p = 10 m s
P D
I DM
113.6
288
W
A
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
T J , T STG
I S
dV/dt
? 55 to
+150
104
6
° C
A
V/ns
ORDERING INFORMATION
Device Package Shipping ?
Single Pulse Drain ? to ? Source Avalanche
Energy (T J = 25 ° C, V DD = 30 V, V GS = 10 V,
I L = 35 A pk , L = 1.0 mH, R G = 25 W)
EAS
612.5
mJ
NTMFS4833NT1G
NTMFS4833NT3G
SO ? 8FL
(Pb ? Free)
SO ? 8FL
1500/Tape & Reel
5000/Tape & Reel
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 ″ from case for 10 s)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface ? mounted on FR4 board using 1 sq ? in pad, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
(Cu area = 50 mm 2 [1 oz])
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2014
March, 2014 ? Rev. 10
1
Publication Order Number:
NTMFS4833N/D
相关PDF资料 |
PDF描述 |
|---|---|
| NTMFS4834NT3G | MOSFET N-CH 30V 13A SO-8FL |
| NTMFS4836NT1G | MOSFET N-CH 30V 11A SO8 FL |
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| NTMFS4839NT3G | MOSFET N-CH 30V 9.5A SO-8FL |
| NTMFS4841NT3G | MOSFET N-CH 30V 8.3A SO-8FL |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMFS4834N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 130 A, Single N−Channel, SO−8FL |
| NTMFS4834NT1G | 功能描述:MOSFET NFET 30V 130A 3MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4834NT3G | 功能描述:MOSFET NFET 30V 130A 3MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4835N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 104 A, Single N−Channel, SO−8FL |
| NTMFS4835NT1G | 功能描述:MOSFET NFET SO8FL 30V 104A 3.5mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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