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| 型号： | NTMFS4839NT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 9.5A SO-8FL |
| 产品变化通告： | Product Discontinuation 04/April/2008 |
| 标准包装： | 5,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 9.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5.5 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 18nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1588pF @ 12V |
| 功率 - 最大： | 870mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TDFN 裸露焊盘（5 引线） |
| 供应商设备封装： | 6-DFN，8-SO 扁平引线（5x6） |
| 包装： | 带卷 (TR) |
NTMFS4839N
Power MOSFET
30 V, 66 A, Single N ? Channel, SO ? 8FL
Features
? Low R DS(ON) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? These are Pb ? Free Devices
Applications
? Refer to Application Note AND8195/D
? CPU Power Delivery
? DC ? DC Converters
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
30 V
http://onsemi.com
R DS(ON) MAX
5.5 m W @ 10 V
9.5 m W @ 4.5 V
D (5,6)
I D MAX
66 A
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
30
Unit
V
Gate ? to ? Source Voltage
V GS
± 20
V
G (4)
Continuous Drain
Current R q JA
(Note 1)
Power Dissipation
R q JA (Note 1)
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
P D
15
11
2.17
A
W
S (1,2,3)
N ? CHANNEL MOSFET
Continuous Drain
Current R q JA
(Note 2)
Power Dissipation
R q JA (Note 2)
Continuous Drain
Current R q JC
(Note 1)
Power Dissipation
R q JC (Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T C = 25 ° C
T C = 85 ° C
T C = 25 ° C
ID
P D
I D
P D
9.5
7.0
0.87
66
48
41.7
A
W
A
W
1
SO ? 8 FLAT LEAD
CASE 488AA
STYLE 1
S
S
S
G
MARKING
DIAGRAM
D
4839N
AYWZZ
D
D
D
Pulsed Drain T A = 25 ° C,
Current t p = 10 m s
Operating Junction and Storage
Temperature
Source Current (Body Diode)
I DM
T J ,
T STG
I S
132
? 55 to
+150
35
A
° C
A
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceavility
Drain to Source DV/DT
Single Pulse Drain ? to ? Source Avalanche
Energy T J = 25 ° C, V DD = 30 V, V GS = 10 V,
I L = 19 A pk , L = 1.0 mH, R G = 25 W
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
dV/dt
EAS
T L
6
180.5
260
V/ns
mJ
° C
ORDERING INFORMATION
Device Package Shipping ?
NTMFS4839NT1G SO ? 8FL 1500 /
(Pb ? Free) Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 sq ? in pad, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
NTMFS4839NT3G SO ? 8FL 5000 /
(Pb ? Free) Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
May, 2012 ? Rev. 5
1
Publication Order Number:
NTMFS4839N/D
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PDF描述 |
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| NTMFS4841NT3G | MOSFET N-CH 30V 8.3A SO-8FL |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMFS4841N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 57 A, Single N−Channel, SO−8FL |
| NTMFS4841NH | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 59 A, Single N−Channel, SO−8FL |
| NTMFS4841NHT1G | 功能描述:MOSFET NFET S08FL 30V 57A 7mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4841NHT3G | 功能描述:MOSFET NFET S08FL 30V 57A 7MO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4841NT1G | 功能描述:MOSFET NFET 30V 57A 7MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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