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| 型号： | NTMFS4708NT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 7.8A SO8 FL |
| 产品变化通告： | Product Discontinuation 21/Jun/2007 |
| 标准包装： | 5,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 毫欧 @ 11.5A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 970pF @ 24V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TDFN 裸露焊盘（5 引线） |
| 供应商设备封装： | 6-DFN，8-SO 扁平引线（5x6） |
| 包装： | 带卷 (TR) |
NTMFS4708N
Power MOSFET
30 V, 19 A, Single N-Channel, SOIC-8 FL
Features
? Fast Switching Times
? Low Gate Charge
? Low R DS(on)
? Low Inductance SOIC-8 Package
? These are Pb-Free Devices
Applications
? Notebooks, Graphics Cards
? DC-DC Converters
? Synchronous Rectification
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
30 V
http://onsemi.com
R DS(on) Typ
7.3 m W @ 10 V
10.1 m W @ 4.5 V
N-Channel
I D Max
19 A
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Symbol
V DSS
V GS
Value
30
± 20
Unit
V
V
D
Continuous Drain Current
(Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
I D
11.5
8.0
A
G
t ≤ 10 s
T A = 25 ° C
19
S
Power Dissipation
(Note 1)
Steady
State
T A = 25 ° C
P D
2.2
W
MARKING DIAGRAM &
PIN ASSIGNMENT
t ≤ 10 s
6.25
D
Continuous Drain Current
(Note 2)
Power Dissipation
(Note 2)
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
P D
7.8
5.6
1.0
A
W
1
SOIC-8 FLAT LEAD
CASE 488AA
STYLE 1
S
S
S
G
4708N
AYWW G
G
D
D
D
Pulsed Drain Current
t p ≤ 10 m s
I DM
58
A
4708N = Specific Device Code
Operating Junction and Storage Temperature
T J ,
T STG
-55 to
150
° C
A = Assembly Location
Y = Year
WW = Work Week
Source Current (Body Diode)
I S
6.25
A
G
= Pb-Free Package
Single Pulse Drain-to-Source Avalanche
Energy. V DD = 25 V, V GS = 10 V, I PK = 7.0 A,
L = 10 mH, R G = 25 W
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
E AS
T L
245
260
mJ
° C
(Note: Microdot may be in either location)
ORDERING INFORMATION
Shipping ?
Device
Package
THERMAL RESISTANCE MAXIMUM RATINGS
T
NTMFS4708NT1G SOIC-8 FL 1500 / ape & Reel
Parameter
Junction-to-Ambient – Steady State (Note 1)
Junction-to-Ambient – t ≤ 10 s (Note 1)
Symbol
R q JA
R q JA
Value
56.5
20
Unit
° C/W
(Pb-Free)
T
NTMFS4708NT3G SOIC-8 FL 5000 / ape & Reel
(Pb-Free)
R q JA
Junction-to-Ambient – Steady State (Note 2) 124
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412 in sq).
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2007
July, 2007 - Rev. 2
1
Publication Order Number:
NTMFS4708N/D
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PDF描述 |
|---|---|
| NTMFS4744NT1G | MOSFET N-CH 30V 7A SO8 FL |
| NTMFS4821NT3G | MOSFET N-CH 30V 8.8A SO-8FL |
| NTMFS4823NT3G | MOSFET N-CH 30V 6.9A SO-8FL |
| NTMFS4825NFET3G | MOSFET N-CH 30V 171A SO-8FL |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMFS4709N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 94 A, Single N-Channel, SOIC-8 FL |
| NTMFS4709NT1G | 制造商:ON Semiconductor 功能描述: |
| NTMFS4709NT3G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 94 A, Single N-Channel, SOIC-8 FL |
| NTMFS4741NT1G | 制造商:ON Semiconductor 功能描述: |
| NTMFS4744N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 53 A, Single N-Channel, SO-8 FL |
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