参数资料
型号: NTMFS4708NT3G
厂商: ON Semiconductor
文件页数: 4/5页
文件大小: 0K
描述: MOSFET N-CH 30V 7.8A SO8 FL
产品变化通告: Product Discontinuation 21/Jun/2007
标准包装: 5,000
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 7.8A
开态Rds(最大)@ Id, Vgs @ 25° C: 10 毫欧 @ 11.5A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 15nC @ 4.5V
输入电容 (Ciss) @ Vds: 970pF @ 24V
功率 - 最大: 1W
安装类型: 表面贴装
封装/外壳: 8-TDFN 裸露焊盘(5 引线)
供应商设备封装: 6-DFN,8-SO 扁平引线(5x6)
包装: 带卷 (TR)
NTMFS4708N
2000
1800
V DS = 0 V
V GS = 0 V
T J = 25 ° C
5
Q T
1600
C ISS
4
1400
1200
C ISS
3
Q gs
Q gd
1000
800
C RSS
C OSS
2
600
400
1
200
0
C RSS
0
I D = 11.5 A
T J = 25 ° C
10
5
0
5
10
15
20
25
0
2
4
6
8
10
V GS
V DS
Q g , TOTAL GATE CHARGE (nC)
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
100
7
Figure 8. Gate-to-Source and
Drain-to-Source Voltage versus Total Charge
V DD = 15 V
I D = 1 A
6
V GS = 0 V
T J = 25 ° C
V GS = 4.5 V
5
10
t f
t d(off)
t d(on)
t r
4
3
2
1
1
0
1
10
100
0.2
0.5
0.8
1000
R G , GATE RESISTANCE ( W )
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
350
V SD , SOURCE-TO-DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage versus
Current
V GS = 2.0 V
SINGLE PULSE
100 T C = 25 ° C
10 m s
300
250
I D = 7 A
10
1
100 m s
1 ms
10 m s
200
150
100
0.1
0.01
RDS(on) LIMIT
Thermal Limit
Package Limit
dc
50
0
0.1
1
10
100
25
50
75
100
125
150
V DS , DRAIN-TO-SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
4
T J , STARTING JUNCTION TEMPERATURE ( ° C)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
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