- 您现在的位置：买卖IC网 > Datasheet目录490 > NTMFS4708NT3G (ON Semiconductor)MOSFET N-CH 30V 7.8A SO8 FL Datasheet资料下载
参数资料
| 型号： | NTMFS4708NT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 7.8A SO8 FL |
| 产品变化通告： | Product Discontinuation 21/Jun/2007 |
| 标准包装： | 5,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 7.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 毫欧 @ 11.5A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 970pF @ 24V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TDFN 裸露焊盘（5 引线） |
| 供应商设备封装： | 6-DFN，8-SO 扁平引线（5x6） |
| 包装： | 带卷 (TR) |
NTMFS4708N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
30
10
V
mV/ ° C
Temperature Coefficient
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V, V DS = 24 V
T J = 25 ° C
T J = 125 ° C
1.0
50
m A
Gate-to-Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20V
± 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.0
5.0
2.5
V
mV/ ° C
Temperature Coefficient
Drain-to-Source On Resistance
R DS(on)
V GS = 10 V, I D = 11.5 A
7.3
10
m W
V GS = 4.5 V, I D = 9.5 A
10.1
14
Forward Transconductance
g FS
V DS = 15 V, I D = 11.5 A
23
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C ISS
970
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz, V DS = 24 V
440
115
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
Q G(TOT)
Q G(TH)
Q GS
Q GD
R G
V GS = 4.5 V, V DS = 15 V; I D = 11.5 A
10
1.3
2.6
4.8
1.95
15
nC
W
SWITCHING CHARACTERISTICS (Note 4)
Turn-On Delay Time
t d(on)
6.7
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 10 V, V DD = 15 V, I D = 1.0 A,
R G = 3.0 W
4.3
20
16
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V, I S = 6.25 A
T J = 25 ° C
T J = 125 ° C
0.78
0.60
1.0
V
Reverse Recovery Time
t RR
32
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V, d IS /d t = 100 A/ m s,
I S = 6.25 A
15.5
16.5
Reverse Recovery Charge
Q RR
24
nC
3. Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
相关PDF资料 |
PDF描述 |
|---|---|
| NTMFS4744NT1G | MOSFET N-CH 30V 7A SO8 FL |
| NTMFS4821NT3G | MOSFET N-CH 30V 8.8A SO-8FL |
| NTMFS4823NT3G | MOSFET N-CH 30V 6.9A SO-8FL |
| NTMFS4825NFET3G | MOSFET N-CH 30V 171A SO-8FL |
| NTMFS4833NST1G | MOSFET N-CH 30V 16A SO-8FL |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMFS4709N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 94 A, Single N-Channel, SOIC-8 FL |
| NTMFS4709NT1G | 制造商:ON Semiconductor 功能描述: |
| NTMFS4709NT3G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 94 A, Single N-Channel, SOIC-8 FL |
| NTMFS4741NT1G | 制造商:ON Semiconductor 功能描述: |
| NTMFS4744N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 53 A, Single N-Channel, SO-8 FL |
发布紧急采购，3分钟左右您将得到回复。