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参数资料
| 型号： | NTMFS4854NST3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 15.2A SO-8FL |
| 标准包装： | 5,000 |
| 系列： | SENSEFET® |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 15.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2.5 毫欧 @ 15A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 66nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 4830pF @ 12V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerTDFN |
| 供应商设备封装： | SO-8FL |
| 包装： | 带卷 (TR) |
NTMFS4854NS
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction ? to ? Case (Drain)
Junction ? to ? Ambient – Steady State (Note 3)
Junction ? to ? Ambient – Steady State (Note )
Symbol
R q JC
R q JA
R q JA
Value
1.45
54
138.7
Unit
° C/W
3. Surface ? mounted on FR4 board using 1 sq ? in pad, 1 oz Cu.
4. Surface ? mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /
T J
V GS = 0 V, I D = 250 m A
25
30
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 20 V
T J = 25 ° C
T J = 125 ° C
10
200
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 16 V
± 100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.0
6.8
2.5
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 10 V
V GS = 4.5 V
V GS = 3.2 V,
I D = 10 A
I D = 15 A
I D = 15 A
T J = 75 ° C
T J = 25 ° C
1.5
2.5
6.0
5.1
2.5
3.9
10
8.8
m W
Forward Transconductance
g FS
V DS = 15 V, I D = 15 A
28
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
C ISS
4830
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Total Gate Charge
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
Q GD
Q G(TOT)
V GS = 0 V, f = 1 MHz, V DS = 12 V
V GS = 4.5 V, V DS = 15 V; I D = 30 A
V GS = 11.5 V, V DS = 15 V;
I D = 30 A
1130
550
36
4.7
13
15
85
66
pF
nC
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn ? On Delay Time
t d(ON)
20
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 4.5 V, V DS = 15 V, I D = 15 A,
R G = 3.0 W
54
38
45
ns
5. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
7. With 0V potential from sense lead to source lead, i.e. using a virtual ground.
http://onsemi.com
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