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| 型号： | NTMFS4899NFT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V SO-8FL |
| 产品目录绘图： | SO8 FL |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 10.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 1mA |
| 闸电荷(Qg) @ Vgs： | 25nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1600pF @ 12V |
| 功率 - 最大： | 920mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TDFN 裸露焊盘（5 引线） |
| 供应商设备封装： | 6-DFN，8-SO 扁平引线（5x6） |
| 包装： | 标准包装 |
| 其它名称： | NTMFS4899NFT1GOSDKR |
NTMFS4899NF
Power MOSFET
30 V, 75 A, Single N ? Channel, SO ? 8 FL
Features
? Integrated Schottky Diode
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
? CPU Power Delivery
? DC ? DC Converters
? Low Side Switching
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
30 V
http://onsemi.com
R DS(ON) MAX
5.0 m W @ 10 V
7.5 m W @ 4.5 V
N ? CHANNEL MOSFET
D
I D MAX
75 A
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
30
Unit
V
Gate ? to ? Source Voltage
Continuous Drain
Current R q JA
(Note 1)
Power Dissipation
R q JA (Note 1)
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
V GS
I D
P D
± 20
17.8
12.9
2.70
V
A
W
G
S
4899NF
S
Continuous Drain
Current R q JA v
10 sec
Power Dissipation
R q JA, t v 10 sec
Continuous Drain
Current R q JA
(Note 2)
Power Dissipation
R q JA (Note 2)
Continuous Drain
Current R q JC
(Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T C = 25 ° C
T C = 85 ° C
I D
P D
I D
P D
I D
29.1
21
7.18
10.4
7.5
0.92
75
54
A
W
A
W
A
1
SO ? 8 FLAT LEAD S AYWZZ
CASE 488AA G
STYLE 1 D
A = Assembly Location
Y = Year
W = Work Week
ZZ = Lot Traceability
S
MARKING
DIAGRAM
D
D
D
Power Dissipation
R q JC (Note 1)
T C = 25 ° C
P D
48
W
Pulsed Drain
Current
t p =10 m s
T A = 25 ° C
I DM
188
A
ORDERING INFORMATION
Current limited by package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
T A = 25 ° C
I Dmaxpkg
T J ,
T STG
I S
dV/dt
90
? 55 to
+150
46
6
A
° C
A
V/ns
Device
NTMFS4899NFT1G
NTMFS4899NFT3G
Package
SO ? 8FL
(Pb ? Free)
SO ? 8FL
Shipping ?
1500 /
Tape & Reel
5000 /
Single Pulse Drain ? to ? Source Avalanche
Energy (V DD = 50 V, V GS = 10 V,
I L = 41 A pk , L = 0.1 mH, R G = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
T L
84
260
mJ
° C
(Pb ? Free) Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
? Semiconductor Components Industries, LLC, 2012
September, 2012 ? Rev. 3
1
Publication Order Number:
NTMFS4899NF/D
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| NTMFS4899NFT3G | 功能描述:IGBT 晶体管 NFET SO8FL 30V 75A 5MOHM RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube |
| NTMFS4921N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 58.5 A, Single N−Channel, SO−8 FL |
| NTMFS4921NT1G | 功能描述:MOSFET NFET SO8FL 30V TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4921NT3G | 功能描述:MOSFET NFET SO8FL 30V TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4922NET1G | 功能描述:MOSFET NFET S08FL 30V 147A 2MOH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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