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参数资料
| 型号： | NTMFS4921NT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 8.8A SO8 FL |
| 产品变化通告： | Product Discontinuation 27/Jan/2012 |
| 标准包装： | 5,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 8.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 6.95 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 25nC @ 11.5V |
| 输入电容 (Ciss) @ Vds： | 1400pF @ 12V |
| 功率 - 最大： | 870mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-TDFN 裸露焊盘（5 引线） |
| 供应商设备封装： | 6-DFN，8-SO 扁平引线（5x6） |
| 包装： | 带卷 (TR) |
NTMFS4921N
Power MOSFET
30 V, 58.5 A, Single N ? Channel, SO ? 8 FL
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? Thermally Enhanced SO ? 8 Package
? These are Pb ? Free Device
Applications
? CPU Power Delivery
? DC ? DC Converters
? High Side Switching
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
30 V
http://onsemi.com
R DS(ON) MAX
6.95 m W @ 10 V
10.8 m W @ 4.5 V
D (5,6)
I D MAX
58.5 A
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
30
Unit
V
Gate ? to ? Source Voltage
Continuous Drain
Current R q JA
(Note 1)
Power Dissipation
R q JA (Note 1)
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
V GS
I D
P D
± 20
13.8
10
2.14
V
A
W
G (4)
S (1,2,3)
N ? CHANNEL MOSFET
Continuous Drain
Current R q JA v
10 sec
Power Dissipation
R q JA, t v 10 sec
Continuous Drain
Current R q JA
(Note 2)
Power Dissipation
R q JA (Note 2)
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
P D
I D
P D
22.4
16.1
5.61
8.8
6.4
0.87
A
W
A
W
1
SO ? 8 FLAT LEAD
CASE 488AA
STYLE 1
S
S
S
G
MARKING
DIAGRAM
D
4921N
AYWZZ
D
D
D
Continuous Drain
Current R q JC
(Note 1)
Power Dissipation
R q JC (Note 1)
Pulsed Drain
Current
t p =10 m s
T C = 25 ° C
T C = 85 ° C
T C = 25 ° C
T A = 25 ° C
I D
P D
I DM
58.5
42.3
38.5
117
A
W
A
A
Y
W
ZZ
= Assembly Location
= Year
= Work Week
= Lot Traceability
Current limited by package
Operating Junction and Storage
Temperature
T A = 25 ° C
I Dmaxpkg
T J ,
T STG
100
? 55 to
+150
A
° C
ORDERING INFORMATION
Device Package Shipping ?
Source Current (Body Diode)
Drain to Source dV/dt
I S
dV/dt
38.5
6
A
V/ns
NTMFS4921NT1G
SO ? 8FL
(Pb ? Free)
1500 /
Tape & Reel
Single Pulse Drain ? to ? Source Avalanche EAS 86 mJ
Energy (V DD = 50 V, V GS = 10 V,
I L = 24 A pk , L = 0.3 mH, R G = 25 W)
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8” from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
NTMFS4921NT3G SO ? 8FL 5000 /
(Pb ? Free) Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
May, 2012 ? Rev. 4
1
Publication Order Number:
NTMFS4921N/D
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| NTMFS4922NET1G | 功能描述:MOSFET NFET S08FL 30V 147A 2MOH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4923NET1G | 功能描述:MOSFET NFETFL 30V 91A 3.3mOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4923NET3G | 功能描述:MOSFET NFETFL 30V 91A 3.3mOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMFS4925N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 48 A, Single Na??Channel, SOa??8 FL |
| NTMFS4925NET1G | 功能描述:MOSFET NFET S08FL 30V 48A 6MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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