参数资料
型号: NTD4860NA-35G
厂商: ON Semiconductor
文件页数: 1/8页
文件大小: 0K
描述: MOSFET N-CH 25V 65A IPAK TRIMMED
产品变化通告: Product Obsolescence 07/Jul/2010
标准包装: 75
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 25V
电流 - 连续漏极(Id) @ 25° C: 10.4A
开态Rds(最大)@ Id, Vgs @ 25° C: 7.5 毫欧 @ 30A,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
闸电荷(Qg) @ Vgs: 21.8nC @ 10V
输入电容 (Ciss) @ Vds: 1308pF @ 12V
功率 - 最大: 1.28W
安装类型: 通孔
封装/外壳: TO-251-3 短截引线,IPak
供应商设备封装: I-Pak
包装: 管件
NTD4860N
Power MOSFET
25 V, 65 A, Single N--Channel, DPAK/IPAK
Features
?
Trench Technology
?
?
Low R DS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
http://onsemi.com
? Optimized Gate Charge to Minimize Switching Losses
? These are Pb--Free Devices
Applications
? VCORE Applications
? DC--DC Converters
V (BR)DSS
25 V
R DS(ON) MAX
7.5 m Ω @ 10 V
11.1 m Ω @ 4.5 V
D
I D MAX
65 A
? High/Low Side Switching
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
G
Parameter
Symbol
Value
Unit
Drain--to--Source Voltage
Gate--to--Source Voltage
V DSS
V GS
25
± 20
V
V
S
N--CHANNEL MOSFET
2 3
3
3
Continuous Drain
Current R θ JA
(Note 1)
Power Dissipation
R θ JA (Note 1)
Continuous Drain
Current R θ JA
(Note 2)
Power Dissipation
R θ JA (Note 2)
Continuous Drain
Current R θ JC
(Note 1)
Power Dissipation
R θ JC (Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T C = 25 ° C
T C = 85 ° C
T C = 25 ° C
I D
P D
ID
P D
I D
P D
13
10
2.0
10.4
8.0
1.28
65
50
50
A
W
A
W
A
W
1 2 1
4 4
4
1
2
CASE 369AA CASE 369AC CASE 369D
DPAK 3 IPAK IPAK
(Bent Lead) (Straight Lead) (Straight Lead
STYLE 2 DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Pulsed Drain t p =10 m s
Current
Current Limited by Package
T A = 25 ° C
T A = 25 ° C
I DM
I DmaxPkg
130
45
A
A
4
Drain
4
Drain
4
Drain
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
T J ,
T STG
I S
dV/dt
--55 to
+175
42
6
° C
A
V/ns
1
2
3
Source Gate Drain Source
1
2
3
Single Pulse Drain--to--Source Avalanche EAS 84.5 mJ
Energy (T J = 25 ° C, V DD = 50 V, V GS = 10 V,
I L = 13 A pk , L = 1.0 mH, R G = 25 Ω )
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8” from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
2
1 Drain 3
Gate
Gate Drain Source
Y = Year
WW = Work Week
4860N = Device Code
G = Pb--Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2010
June, 2010 -- Rev. 1
1
Publication Order Number:
NTD4860N/D
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