- 您现在的位置：买卖IC网 > PDF目录18422 > NTD4860NA-35G (ON Semiconductor)MOSFET N-CH 25V 65A IPAK TRIMMED PDF资料下载
参数资料
| 型号： | NTD4860NA-35G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 25V 65A IPAK TRIMMED |
| 产品变化通告： | Product Obsolescence 07/Jul/2010 |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 25V |
| 电流 - 连续漏极(Id) @ 25° C： | 10.4A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7.5 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 21.8nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1308pF @ 12V |
| 功率 - 最大： | 1.28W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短截引线，IPak |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
NTD4860N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction--to--Case (Drain)
Junction--to--TAB (Drain)
Junction--to--Ambient – Steady State (Note 1)
Junction--to--Ambient – Steady State (Note 2)
Symbol
R θ JC
R θ JC--TAB
R θ JA
R θ JA
Value
3
3.5
75
117
Unit
° C/W
1. Surface--mounted on FR4 board using 1 sq--in pad, 1 oz Cu.
2. Surface--mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain--to--Source Breakdown Voltage
Drain--to--Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /
T J
V GS = 0 V, I D = 250 m A
25
21
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 20 V
T J = 25 ° C
T J = 125 ° C
1.0
10
m A
Gate--to--Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.45
5.2
2.5
V
mV/ ° C
Drain--to--Source On Resistance
R DS(on)
V GS = 10 V
V GS = 4.5 V
I D = 30 A
I D = 30 A
6.1
8.9
7.5
11.1
m Ω
Forward Transconductance
g FS
V DS = 1.5 V, I D = 15 A
48
S
CHARGES AND CAPACITANCES
Input Capacitance
C ISS
1308
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate--to--Source Charge
Gate--to--Drain Charge
Total Gate Charge
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
Q GD
Q G(TOT)
V GS = 0 V, f = 1.0 MHz, V DS = 12 V
V GS = 4.5 V, V DS = 15 V, I D = 30 A
V GS = 10 V, V DS = 15 V, I D = 30 A
342
169
11
1.2
3.9
4.7
21.8
16.5
pF
nC
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn--On Delay Time
t d(ON)
12.2
Rise Time
Turn--Off Delay Time
Fall Time
Turn--On Delay Time
Rise Time
Turn--Off Delay Time
Fall Time
t r
t d(OFF)
t f
t d(ON)
t r
t d(OFF)
t f
V GS = 4.5 V, V DS = 15 V,
I D = 15 A, R G = 3.0 Ω
V GS = 11.5 V, V DS = 15 V,
I D = 15 A, R G = 3.0 Ω
20.1
15.2
4.3
7.1
17
22
2.3
ns
ns
3. Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
相关PDF资料 |
PDF描述 |
|---|---|
| B32620J392J289 | FILM CAP 0.0039UF 5% 1KV |
| B32620A3683J289 | FILM CAP 0.0680UF 5% 250V |
| B32562J6224J289 | FILM CAP 0.22UF 5% 400V |
| B32562J3474J289 | FILM CAP 0.47UF 5% 250V |
| B32521C3224K289 | FILM CAP 0.2200UF 10% 250V |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTD4860NAT4G | 功能描述:MOSFET NFET 25V 65A 0.0075R DPAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4860NT4G | 功能描述:MOSFET NFET 25V 65A 0.0075R DPAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTD4860NT4H | 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述: |
| NTD4863N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 25 V, 49 A, Single N-Channel, DPAK/IPAK |
| NTD4863N-1G | 功能描述:MOSFET NFET 25V 49A 0.0093R DPAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。