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| 型号： | NTMS4816NR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 6.8A 8-SOIC |
| 产品变化通告： | Wire Change 29/Aug/2008 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 6.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 毫欧 @ 9A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 18.3nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 1060pF @ 25V |
| 功率 - 最大： | 780mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 标准包装 |
| 其它名称： | NTMS4816NR2GOSDKR |
NTMS4816N
Power MOSFET
30 V, 11 A, N ? Channel, SO ? 8
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? These Devices are Pb ? Free and are RoHS Compliant
http://onsemi.com
Applications
? Disk Drives
? DC ? DC Converters
? Printers
V (BR)DSS
30 V
R DS(ON) MAX
10 m W @ 10 V
16 m W @ 4.5 V
I D MAX
11 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter Symbol
Value
Unit
N ? Channel
D
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
30
± 20
V
V
Continuous Drain
Current R q JA (Note 1)
Power Dissipation R q JA
(Note 1)
Continuous Drain
Current R q JA (Note 2)
Steady
State
Steady
State
Steady
State
T A = 25 ° C
T A = 70 ° C
T A = 25 ° C
T A = 25 ° C
T A = 70 ° C
I D
P D
I D
9.0
7.2
1.37
6.8
5.4
A
W
A
G
S
MARKING DIAGRAM/
PIN ASSIGNMENT
Source
Source
Source
Gate
Top View
Power Dissipation R q JA
(Note 2)
Continuous Drain
Current R q JA , t v 10 s
(Note 1)
Power Dissipation
R q JA , t v 10 s(Note 1)
Pulsed Drain Current
T A = 25 ° C
Steady T A = 25 ° C
State
T A = 70 ° C
Steady T A = 25 ° C
State
T A = 25 ° C, t p = 10 m s
P D
I D
P D
I DM
0.78
11
8.8
2.04
33
W
A
W
A
1
1
SO ? 8
CASE 751
STYLE 12
4816N = Device Code
A = Assembly Location
8
Drain
Drain
Drain
Drain
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain ? to ? Source Avalanche Energy
(T J = 25 ° C, V DD = 30 V, V GS = 10 V,
I L = 12.5 A pk , L = 1.0 mH, R G = 25 W )
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
T J ,
T stg
I S
E AS
T L
? 55 to
150
2.7
78
260
° C
A
mJ
° C
Y = Year
WW = Work Week
G = Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping ?
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter Symbol
Junction ? to ? Ambient – Steady State (Note 1) R q JA
Junction ? to ? Ambient – t v 10 s (Note 1) R q JA
Junction ? to ? Foot (Drain) R q JF
Junction ? to ? Ambient – Steady State (Note 2)
R q JA
Value
91.5
61.3
22.5
159.5
Unit
° C/W
NTMS4816NR2G SO ? 8 2500 / Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surfacemounted on FR4 board using the minimum recommended pad size.
? Semiconductor Components Industries, LLC, 2013
September, 2013 ? Rev. 2
1
Publication Order Number:
NTMS4816N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTMS4840N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 7.5 A, Single N−Channel, SOIC−8 |
| NTMS4840NR2G | 功能描述:MOSFET NFET SO8 30V 30A 24MO RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMS4872N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 10.2 A, N−Channel, SO−8 |
| NTMS4872NR2G | 功能描述:MOSFET NFET SO8 30V 10.2A 13.5mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTMS4873NF | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 11.5 A, N−Channel, SO−8 |
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