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参数资料
| 型号： | NTP35N15G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CHAN 37A 150V TO220AB |
| 产品变化通告： | Product Obsolescence 05/Oct/2010 |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 150V |
| 电流 - 连续漏极(Id) @ 25° C： | 37A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 50 毫欧 @ 18.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 100nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3200pF @ 25V |
| 功率 - 最大： | 178W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
NTP35N15
Power MOSFET
37 Amps, 150 Volts
N ? Channel TO ? 220
Features
? Source ? to ? Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
? Avalanche Energy Specified
? I DSS and R DS(on) Specified at Elevated Temperature
? This is a Pb ? Free Device*
Applications
? PWM Motor Controls
? Power Supplies
? Converters
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
http://onsemi.com
37 AMPERES
150 VOLTS
50 m W @ V GS = 10 V
N ? Channel
D
G
S
Rating
Drain ? to ? Source Voltage
Drain ? to ? Source Voltage (R GS = 1.0 M W )
Gate ? to ? Source Voltage
? Continuous
? Non ? Repetitive (t p v 10 ms)
Symbol
V DSS
V DGR
V GS
V GSM
Value
150
150
" 20
" 40
Unit
Vdc
Vdc
Vdc
MARKING DIAGRAM &
PIN ASSIGNMENT
D
3
Drain Current
? Continuous @ T A 25 ° C
? Continuous @ T A 100 ° C
? Pulsed (Note 1)
Total Power Dissipation @ T A = 25 ° C
Derate above 25 ° C
Operating and Storage Temperature Range
I D
I D
I DM
P D
T J , T stg
37
23
111
178
1.43
? 55 to
+150
Adc
W
W/ ° C
° C
1
2
TO ? 220
CASE 221A
STYLE 5
1
35N15G
AYWW
G D S
Single Drain ? to ? Source Avalanche Energy ?
Starting T J = 25 ° C
(V DD = 100 Vdc, V GS = 10 Vdc,
I L (pk) = 21.6 A, L = 3.0 mH, R G = 25 W )
Thermal Resistance
? Junction ? to ? Case
? Junction ? to ? Ambient
E AS
R q JC
R q JA
700
0.7
62.5
mJ
° C/W
A
Y
WW
G
= Assembly Location
= Year
= Work Week
= Pb ? Free Package
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
T L
260
° C
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 10 m s, Duty Cycle = 2%.
Device
NTP35N15G
Package
TO ? 220
(Pb ? Free)
Shipping
50 Units / Rail
*For additional information on our Pb ? Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
? Semiconductor Components Industries, LLC, 2010
May, 2010 ? Rev. 4
1
Publication Order Number:
NTP35N15/D
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