参数资料
型号: NTP4302G
厂商: ON Semiconductor
文件页数: 1/7页
文件大小: 0K
描述: MOSFET N-CH 30V 74A TO220AB
产品变化通告: Product Obsolescence 12/Apr/2006
标准包装: 50
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 标准
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 74A
开态Rds(最大)@ Id, Vgs @ 25° C: 9.3 毫欧 @ 37A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 28nC @ 4.5V
输入电容 (Ciss) @ Vds: 2400pF @ 24V
功率 - 最大: 80W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
其它名称: NTP4302GOS
NTP4302, NTB4302
Power MOSFET
74 Amps, 30 Volts
N?Channel TO?220 & D 2 PAK
Features
http://onsemi.com
?
?
?
?
?
?
Low R DS(on)
Higher Efficiency Extending Battery Life
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
I DSS Specified at Elevated Temperature
Pb?Free Packages are Available
V DSS
30 V
R DS(ON) MAX I D MAX
9.3 m W @ 10 V 74 A
N?Channel
D
Typical Applications
? DC?DC Converters
? Low Voltage Motor Control
? Power Management in Portable and Battery Powered Products:
Ie: Computers, Printers, Cellular and Cordless Telephones, and
PCMCIA Cards
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
G
4
S
4
Rating
Symbol
Value
Unit
1
2
Drain?to?Source Voltage
V DSS
30
Vdc
TO?220AB
3
D 2 PAK
Drain?to?Gate Voltage (R GS = 10 M W )
Gate?to?Source Voltage ? Continuous
V DGR
V GS
30
" 20
Vdc
Vdc
1
2
3
CASE 221A
STYLE 5
CASE 418AA
STYLE 2
Drain Current
? Continuous @ T C = 25 ° C
? Continuous @ T C = 100 ° C
? Single Pulse (t p v 10 m s)
I D
I D
I DM
74
47
175
Adc
Apk
4
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Total Power Dissipation @ T C = 25 ° C
Derate above 25 ° C
Operating and Storage Temperature Range
P D
T J , T stg
80
0.66
?55 to
W
W/ ° C
° C
Drain
4
Drain
+150
Single Pulse Drain?to?Source Avalanche
Energy ? Starting T J = 25 ° C
E AS
722
mJ
NTx4302G
AYWW
NTx4302G
AYWW
(V DD = 30 Vdc, V GS = 10 Vdc, L = 5.0 mH
I L(pk) = 17 A, V DS = 30 Vdc, R G = 25 W )
Thermal Resistance
? Junction?to?Case
? Junction?to?Ambient (Note 1)
R q JC
R q JA
1.55
70
° C/W
1
Gate
2
Drain
3
Source
1
Gate
2
Drain
3
Source
Maximum Lead Temperature for Soldering
T L
260
° C
NTx4302
= Device Code
Purposes, 1/8 in from case for 10 seconds
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
x
A
Y
WW
G
= B or P
= Assembly Location
= Year
= Work Week
= Pb?Free Package
1. When surface mounted to an FR4 Board using minimum recommended Pad
Size, (Cu Area 0.412 in 2 ).
2. Current limited by internal lead wires.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2005
August, 2005 ? Rev. 3
1
Publication Order Number:
NTP4302/D
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