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| 型号： | NTP4302G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 74A TO220AB |
| 产品变化通告： | Product Obsolescence 12/Apr/2006 |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 74A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 9.3 毫欧 @ 37A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 28nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 2400pF @ 24V |
| 功率 - 最大： | 80W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | NTP4302GOS |
NTP4302, NTB4302
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage (Note 3)
(V GS = 0 Vdc, I D = 250 m Adc)
Temperature Coefficient (Positive)
V (BR)DSS
30
?
?
25
?
?
Vdc
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
m Adc
(V DS = 30 Vdc, V GS = 0 Vdc)
(V DS = 30 Vdc, V GS = 0 Vdc, T J = 125 ° C)
?
?
?
?
1.0
10
Gate?Body Leakage Current (V GS = ± 20 Vdc, V DS = 0 Vdc)
I GSS
?
?
± 100
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V DS = V GS , I D = 250 m Adc)
Threshold Temperature Coefficient (Negative)
V GS(th)
1.0
?
1.9
?3.8
3.0
?
Vdc
mV/ ° C
Static Drain?to?Source On?Resistance (Note 3)
R DS(on)
m W
(V GS = 10 Vdc, I D = 37 Adc)
(V GS = 10 Vdc, I D = 20 Adc)
(V GS = 4.5 Vdc, I D = 10 Adc)
?
6.8
6.8
9.5
9.3
9.3
12.5
Forward Transconductance (Note 3) (V DS = 10 Vdc, I D = 20 Adc)
g FS
?
40
?
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
2050
2400
pF
Output Capacitance
Transfer Capacitance
(V DS = 24 Vdc, V GS = 0 Vdc,
f = 1.0 MHz)
C oss
C rss
?
?
640
225
800
310
SWITCHING CHARACTERISTIC S (Note 4)
Turn?On Delay Time
t d(on)
?
10
18
ns
Rise Time
Turn?Off Delay Time
Fall Time
(V DD = 24 Vdc, I D = 20 Adc,
V GS = 10 Vdc, R G = 2.5 W ) (Note 3)
t r
t d(off)
t f
?
?
?
22
45
35
35
75
70
Turn?On Delay Time
t d(on)
?
18
?
ns
Rise Time
Turn?Off Delay Time
Fall Time
(V DD = 24 Vdc, I D = 10 Adc,
V GS = 4.5 Vdc, R G = 2.5 W ) (Note 3)
t r
t d(off)
t f
?
?
?
70
32
30
?
?
?
Gate Charge
(V DS = 24 Vdc, I D = 37 Adc,
V GS = 4.5 Vdc) (Note 3)
Q T
Q gs
Q gd
?
?
?
28
7.5
19
?
?
?
nC
SOURCE?DRAIN DIODE CHARACTERISTICS
Forward On?Voltage
Reverse Recovery Time
(I S = 20 Adc, V GS = 0 Vdc) (Note 3)
(I S = 20 Adc, V GS = 0 Vdc, T J = 125 ° C)
(I S = 20 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s) (Note 3)
V SD
t rr
t a
?
?
?
?
0.90
0.75
37
21
1.3
?
?
?
Vdc
ns
t b
?
16
?
Reverse Recovery Stored Charge
Q RR
?
0.035
?
m C
3. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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