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参数资料
| 型号： | NTP5863NG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 97A TO-220AB |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 97A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 7.8 毫欧 @ 20A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 55nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3200pF @ 25V |
| 功率 - 最大： | 150W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
NTP5863N
N-Channel Power MOSFET
60 V, 97 A, 7.8 m W
Features
? Low R DS(on)
? High Current Capability
? 100% Avalanche Tested
? These Devices are Pb ? Free, Halogen Free and are RoHS Compliant
MAXIMUM RATINGS (T J = 25 ° C Unless otherwise specified)
V (BR)DSS
60 V
http://onsemi.com
R DS(on) MAX
7.8 m W @ 10 V
I D MAX
97 A
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
Gate ? to ? Source Voltage ? Nonrepetitive
(T P < 10 m s)
V DSS
V GS
V GS
60
$ 20
30
V
V
V
G
D
Continuous Drain
Current
Steady
State
T C = 25 ° C
T C = 100 ° C
I D
97
68
A
S
Power Dissipation
Pulsed Drain Current
Steady T C = 25 ° C
State
t p = 10 m s
P D
I DM
150
383
W
A
N ? CHANNEL MOSFET
4
Operating and Storage Temperature Range
Source Current (Body Diode)
T J , T stg
I S
? 55 to
+175
97
° C
A
1
Single Pulse Drain ? to ? Source Avalanche
Energy (L = 0.1 mH, I L(pk) = 56 A)
Peak Diode Recovery (dV/dt)
Lead Temperature for Soldering
Purposes (1/8 ″ from Case for 10 Seconds)
E AS
dV/dt
T L
157
4.1
260
mJ
V/ns
° C
TO ? 220AB
CASE 221A
2 STYLE 5
3
MARKING DIAGRAMS
THERMAL RESISTANCE RATINGS
& PIN ASSIGNMENTS
4
Parameter
Junction ? to ? Case (Drain) Steady State
Junction ? to ? Ambient ? Steady State (Note 1)
Symbol
R q JC
R q JA
Max
1.0
36
Unit
° C/W
Drain
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
1
Gate
NTP
5863NG
AYWW
3
Source
2
Drain
G
A
Y
WW
= Pb ? Free Device
= Assembly Location
= Year
= Work Week
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
July, 2011 ? Rev. 2
1
Publication Order Number:
NTP5863N/D
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相关代理商/技术参数 |
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| NTP5864NG | 功能描述:MOSFET NFETSO8FL60V17A39M OHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTP5N60/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 5 Amps， 600 Volts |
| NTP60N06 | 功能描述:MOSFET 60V 60A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTP60N06/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 60 Amps， 60 Volts |
| NTP60N06G | 功能描述:MOSFET 60V 60A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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