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参数资料
| 型号： | NTP52N10 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 100V 60A TO220AB |
| 产品变化通告： | Product Obsolescence 11/Feb/2009 |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 100V |
| 电流 - 连续漏极(Id) @ 25° C： | 60A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 30 毫欧 @ 26A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 135nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 3150pF @ 25V |
| 功率 - 最大： | 214W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | NTP52N10OS |
NTP52N10
Power MOSFET
60 Amps, 100 Volts
N ? Channel Enhancement Mode TO ? 220
Features
? Source ? to ? Drain Diode Recovery Time comparable to a Discrete
Fast Recovery Diode
? Avalanche Energy Specified
? I DSS and R DS(on) Specified at Elevated Temperature
? Pb ? Free Package is Available*
Applications
? PWM Motor Controls
? Power Supplies
? Converters
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
http://onsemi.com
60 AMPERES
100 VOLTS
30 m W @ V GS = 10 V
N ? Channel
D
G
S
Rating
Symbol
Value
Unit
Drain ? to ? Source Voltage
V DSS
100
Vdc
MARKING DIAGRAM &
Drain ? to ? Source Voltage (R GS = 1.0 M W )
Gate ? to ? Source Voltage
? Continuous
? Non ? Repetitive (t p v 10 ms)
Drain
? Continuous @ T A 25 ° C
? Continuous @ T A 100 ° C
? Pulsed (Note 1.)
Total Power Dissipation @ T A 25 ° C
Derate above 25 ° C
Operating and Storage Temperature Range
Single Drain ? to ? Source Avalanche Energy
? Starting T J = 25 ° C
(V DD = 50 V, V GS = 10 Vdc,
I L (pk) = 40 A, L = 1.0 mH, R G = 25 W )
Thermal Resistance
? Junction ? to ? Case
? Junction ? to ? Ambient
V DGR
V GS
V GSM
I D
I D
I DM
P D
T J , T stg
E AS
R q JC
R q JA
100
" 20
" 40
60
40
156
214
1.43
? 55 to
+175
800
0.7
62.5
Vdc
Vdc
Adc
Watts
W/ ° C
° C
mJ
° C/W
4
1
2
3
TO ? 220
CASE 221A
STYLE 5
A
Y
WW
G
PIN ASSIGNMENT
D
NTP52N10G
AYWW
1
G D S
= Assembly Location
= Year
= Work Week
= Pb ? Free Package
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
T L
260
° C
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 10 m s, Duty Cycle = 2%.
*For additional information on our Pb ? Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device
NTP52N10
NTP52N10G
Package
TO ? 220
TO ? 220
(Pb ? Free)
Shipping
50 Units / Rail
50 Units / Rail
? Semiconductor Components Industries, LLC, 2006
March, 2006 ? Rev. 4
1
Publication Order Number:
NTP52N10/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTP52N10/D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 52 Amps, 100 Volts |
| NTP52N10D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 52 Amps, 100 Volts |
| NTP52N10G | 功能描述:MOSFET 100V 60A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTP5404N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 40 V, 136 A, Single N−Channel, D2PAK & TO−220 |
| NTP5404NRG | 功能描述:MOSFET NFET TO220 40V 136A 3.5mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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