参数资料
型号: NTP65N02R
厂商: ON Semiconductor
文件页数: 5/8页
文件大小: 0K
描述: MOSFET N-CH 25V 7.6A TO220AB
标准包装: 50
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 25V
电流 - 连续漏极(Id) @ 25° C: 7.6A
开态Rds(最大)@ Id, Vgs @ 25° C: 10.5 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 9.5nC @ 4.5V
输入电容 (Ciss) @ Vds: 1330pF @ 20V
功率 - 最大: 1.04W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
其它名称: NTP65N02ROS
NTB65N02R, NTP65N02R
1
D = 0.5
0.2
0.1
0.05
0.01
SINGLE PULSE
0.1
0.0001
0.001
0.01
0.1
1
10
t, TIME (s)
Figure 12. Thermal Response
ORDERING INFORMATION
NTB65N02R
NTB65N02RG
NTB65N02RT4
NTB65N02RT4G
NTP65N02R
NTP65N02RG
Device
Package
D 2 PAK
D 2 PAK
(Pb?Free)
D 2 PAK
D 2 PAK
(Pb?Free)
TO?220AB
TO?220AB
Shipping ?
50 Units / Rail
50 Units / Rail
800 / Tape & Reel
800 / Tape & Reel
50 Units / Rail
50 Units / Rail
(Pb?Free)
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
5
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