参数资料
型号: NTP65N02RG
厂商: ON Semiconductor
文件页数: 7/8页
文件大小: 0K
描述: MOSFET N-CH 25V 7.6A TO220AB
产品变化通告: Product Obsolescence 01/Jul/2009
标准包装: 50
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 25V
电流 - 连续漏极(Id) @ 25° C: 7.6A
开态Rds(最大)@ Id, Vgs @ 25° C: 10.5 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 9.5nC @ 4.5V
输入电容 (Ciss) @ Vds: 1330pF @ 20V
功率 - 最大: 1.04W
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
其它名称: NTP65N02RGOS
NTB65N02R, NTP65N02R
PACKAGE DIMENSIONS
D 2 PAK
CASE 418AA?01
ISSUE O
C
NOTES:
1. DIMENSIONING AND TOLERANCING
?B?
4
E
V
W
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A
0.340 0.380
8.64 9.65
B
0.380 0.405
9.65 10.29
1
2
3
S
A
C
D
E
0.160 0.190
0.020 0.036
0.045 0.055
4.06 4.83
0.51 0.92
1.14 1.40
F
G
0.310 ???
0.100 BSC
7.87 ???
2.54 BSC
?T?
SEATING
PLANE
G
K
J
W
J
K
M
S
0.018 0.025
0.090 0.110
0.280 ???
0.575 0.625
0.46 0.64
2.29 2.79
7.11 ???
14.60 15.88
V
0.045 0.055
1.14 1.40
VARIABLE
CONFIGURATION
D 3 PL
0.13 (0.005)
M
T B
M
STYLE 2:
PIN 1.
2.
3.
4.
GATE
DRAIN
SOURCE
DRAIN
ZONE
U
M
F
VIEW W?W
1
M
F
VIEW W?W
2
M
F
VIEW W?W
3
SOLDERING FOOTPRINT*
8.38
0.33
10.66
0.42
17.02
0.67
1.016
0.04
3.05
0.12
SCALE 3:1
5.08
0.20
mm
inches
*For additional information on our Pb?Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
7
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