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| 型号： | NTP75N03L09 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 75A TO220AB |
| 产品变化通告： | Product Discontinuation 20/Aug/2008 |
| 标准包装： | 50 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 75A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8 毫欧 @ 37.5A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 75nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 5635pF @ 25V |
| 功率 - 最大： | 2.5W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 其它名称： | NTP75N03L09OS |
NTP75N03L09,
NTB75N03L09
Power MOSFET
75 Amps, 30 Volts
N?Channel TO?220 and D 2 PAK
http://onsemi.com
This Logic Level Vertical Power MOSFET is a general purpose part
that provides the “best of design” available today in a low cost power
package. Avalanche energy issues make this part an ideal design in.
The drain?to?source diode has a ideal fast but soft recovery.
Features
75 AMPERES, 30 VOLTS
R DS(on) = 8 m W
N?Channel
D
?
?
?
?
?
?
?
Ultra?Low R DS(on) , Single Base, Advanced Technology
SPICE Parameters Available
Diode is Characterized for Use in Bridge Circuits
I DSS and V DS(on) Specified at Elevated Temperatures
High Avalanche Energy Specified
ESD JEDAC Rated HBM Class 1, MM Class B, CDM Class 0
Pb?Free Packages are Available
G
S
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Typical Applications
? Power Supplies
? Inductive Loads
? PWM Motor Controls
? Replaces MTP75N03HDL and MTB75N03HDL in Many
Applications
4
TO?220
CASE 221A
STYLE 5
4
Drain
75N
03L09G
AYWW
1
2
3
1
Gate
2
3
Source
Drain
4
Drain
4
75N
1
2
3
D 2 PAK
CASE 418AA
STYLE 2
03L09G
AYWW
2
1
Drain
Gate
3
Source
75N03L09
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb?Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2005
August, 2005 ? Rev. 7
1
Publication Order Number:
NTP75N03L09/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTP75N03L09/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 75 Amps， 30 Volts |
| NTP75N03L09G | 功能描述:MOSFET 30V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTP75N03R | 功能描述:MOSFET 25V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTP75N03RG | 功能描述:MOSFET 25V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTP75N06 | 功能描述:MOSFET 60V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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