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参数资料
| 型号： | NTR2101PT1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 8V 3.7A SOT-23 |
| 产品变化通告： | LTB Notification 03/Jan/2008 Wire Change for SOT23 Pkg 26/May/2009 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 8V |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 52 毫欧 @ 3.5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1173pF @ 4V |
| 功率 - 最大： | 960mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 带卷 (TR) |
NTR2101P
Small Signal MOSFET
? 8.0 V, ? 3.7 A, Single P ? Channel, SOT ? 23
Features
?
?
?
?
Leading Trench Technology for Low R DS(on)
? 1.8 V Rated for Low Voltage Gate Drive
SOT ? 23 Surface Mount for Small Footprint (3 x 3 mm)
This is a Pb ? Free Device
V (BR)DSS
http://onsemi.com
R DS(on) Typ
39 m W @ ? 4.5 V
I D Max
Applications
? High Side Load Switch
? DC ? DC Conversion
? Cell Phone, Notebook, PDAs, etc.
? 8.0 V
52 m W @ ? 2.5 V
79 m W @ ? 1.8 V
P ? Channel
D
? 3.7 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
? 8.0
± 8.0
V
V
G
Continuous Drain
Current (Note 1)
t ≤ 5s
T A = 25 ° C
T A = 70 ° C
I D
? 3.7
? 3.0
A
S
Power Dissipation
(Note 1)
t ≤ 5s
P D
0.96
W
3
MARKING DIAGRAM &
PIN ASSIGNMENT
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
Source Current (Body Diode)
I DM
T J ,
T STG
I S
? 11
? 55 to
150
? 1.2
A
° C
A
1
2
SOT ? 23
Drain
3
TR7 M G
G
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
T L
260
° C
CASE 318
STYLE 21
1
Gate
2
Source
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max
Unit
TR7 = Specific Device Code
M = Date Code*
Junction ? to ? Ambient – Steady State R q JA 160 ° C/W
Junction ? to ? Ambient ? t ≤ 5 s R q JA 130
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
G = Pb ? Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device Package Shipping ?
NTR2101PT1G
SOT ? 23
3000/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2013
January, 2013 ? Rev. 6
1
Publication Order Number:
NTR2101P/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTR2101PT1G | 功能描述:MOSFET -8V 3.7A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTR2101PT1G | 制造商:ON Semiconductor 功能描述:MOSFET |
| NTR2101PT1G-CUT TAPE | 制造商:ON 功能描述:NTR Series P-Channel 8 V 39 mOhm 0.96 W SMT Small Signal MOSFET - SOT-23 |
| NTR25A1000BTRF | 制造商:NIC Components Corp 功能描述:RES THNFLM 2010 100 OHM 0.05% 1/4W 10PPM/ C SMD - Tape and Reel |
| NTR25A1000CTRF | 制造商:NIC Components Corp 功能描述:RES THNFLM 2010 100 OHM 0.05% 1/4W 25PPM/ C SMD - Tape and Reel |
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