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| 型号： | NTST20100CTG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 126K |
| 描述： | IC DIODE SCHOTTKY 100V TO220-3 |
| 标准包装： | 50 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 100V |
| 电流 - 平均整流 (Io)： | 20A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 830mV @ 10A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 800µA @ 100V |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
    NTST20100CT, NTSB20100CT?1G, NTSJ20100CTG, NTSB20100CTG http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V V RRM RWM VR 100 V Average Rectified Forward Current (Rated VR, TC = 130 °C) Per device Per diode IF(AV) 20 10 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz, TC = 125 °C) Per device Per diode IFRM 40 20 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 A Operating Junction Temperature TJ ?40 to +150 °C Storage Temperature Tstg ?40 to +150 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/s Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Rating Symbol NTST20100CTG, NTSB20100CT?1G NTSB20100CTG NTSJ20100CTG Unit Maximum Thermal Resistance per Diode Junction?to?Case Junction?to?Ambient RJC RJA 2.5 70 1.5 46.9 4.49 105 °C/W °C/W ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted) Rating Symbol Typ Max Unit Maximum Instantaneous Forward Voltage (Note 1) (IF = 5 A, T J = 25 °C) (IF = 10 A, T J = 25 °C) (IF = 5 A, T J = 125 °C) (IF = 10 A, T J = 125 °C) vF 0.55 0.65 0.50 0.58 ? 0.83 ? 0.68 V Maximum Instantaneous Reverse Current (Note 1) (VR = 70 V, T J = 25 °C) (VR = 70 V, T J = 125 °C) (Rated dc Voltage, TJ = 25 °C) (Rated dc Voltage, TJ = 125 °C) IR 17 5.3 ? 12 ? ? 800 25 A mA A mA 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% |
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PDF描述 |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTST20120CT | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Very Low Forward Voltage Trench-based Schottky Rectifier |
| NTST20120CTG | 功能描述:肖特基二极管与整流器 RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| NTST20U100CT | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Very Low Forward Voltage Trench-based Schottky |
| NTST20U100CTG | 功能描述:肖特基二极管与整流器 LVFR DUAL 20A 100V TO-220 RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| NTST30100CT-D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Very Low Forward Voltage Trench-based Schottky Rectifier |
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