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| 型号： | NTTS2P02R2 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Power MOSFET -2.4 Amps, -20 Volts Single P–Channel( -2.4 A, -20 V单P通道的功率MOSFET) |
| 中文描述： | 2400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MINIATURE, CASE 846A-02, MICRO-8 |
| 文件页数： | 2/8页 |
| 文件大小： | 82K |
| 代理商： | NTTS2P02R2 |
NTTS2P02R2
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TC = 25
°
C unless otherwise noted) *
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = –250
μ
Adc)
Temperature Coefficient (Positive)
V(BR)DSS
–20
–
–
–12.7
–
–
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = –16 Vdc, TJ = 25
°
C)
(VGS = 0 Vdc, VDS = –16 Vdc, TJ = 125
°
C)
IDSS
–
–
–
–
–1.0
–25
μ
Adc
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = –20 Vdc, TJ = 25
°
C)
IDSS
–
–
–5.0
μ
Adc
Gate–Body Leakage Current
(VGS = –8 Vdc, VDS = 0 Vdc)
IGSS
–
–
–100
nAdc
Gate–Body Leakage Current
(VGS = +8 Vdc, VDS = 0 Vdc)
IGSS
–
–
100
nAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = –250
μ
Adc)
Temperature Coefficient (Negative)
VGS(th)
–0.5
–
–0.90
2.5
–1.4
–
Vdc
mV/
°
C
Static Drain–to–Source On–State Resistance
(VGS = –4.5 Vdc, ID = –2.4 Adc)
(VGS = –2.7 Vdc, ID = –1.2 Adc)
(VGS = –2.5 Vdc, ID = –1.2 Adc)
Forward Transconductance (VDS = –10 Vdc, ID = –1.2 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
RDS(on)
–
–
–
0.070
0.100
0.110
0.090
0.130
–
gFS
2.0
4.2
–
Mhos
(VDS = –16 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
–
550
–
pF
Output Capacitance
–
200
–
Reverse Transfer Capacitance
Crss
–
100
–
SWITCHING CHARACTERISTICS
(Notes 4. & 5.)
Turn–On Delay Time
td(on)
tr
td(off)
tf
–
10
–
ns
Rise Time
(VDD = –10 Vdc, ID = –2.4 Adc,
(VDD 10 Vdc, ID 2.4 Adc,
VGS = –4.5 Vdc, RG = 6.0
)
–
31
–
Turn–Off Delay Time
–
33
–
Fall Time
–
29
–
Turn–On Delay Time
td(on)
tr
td(off)
tf
Qtot
Qgs
Qgd
–
15
–
ns
Rise Time
(VDD = –10 Vdc, ID = –1.2 Adc,
(VDD 10 Vdc, ID 1.2 Adc,
VGS = –2.7 Vdc, RG = 6.0
)
–
40
–
Turn–Off Delay Time
–
35
–
Fall Time
–
35
–
Total Gate Charge
(VDS= –16 Vdc,
(VDS = –16 Vdc,
VGS
2 4 Ad )
ID = –2.4 Adc)
–
10
18
nC
Gate–Source Charge
–
1.5
–
Gate–Drain Charge
–
5.0
–
BODY–DRAIN DIODE RATINGS
(Note 4.)
Diode Forward On–Voltage
(IS = –2.4 Adc, VGS = 0 Vdc)
(IS = –2.4 Adc, VGS = 0 Vdc, TJ = 125
°
C)
VSD
–
–
–0.88
–0.75
–1.0
–
Vdc
Reverse Recovery Time
(IS = –2.4 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/
μ
s)
2 4 Ad
trr
ta
tb
–
37
–
ns
–
16
–
–
21
–
Reverse Recovery Stored Charge
4. Indicates Pulse Test: Pulse Width = 300
μ
s max, Duty Cycle = 2%.
5. Switching characteristics are independent of operating junction temperature.
* Handling precautions to protect against electrostatic discharge is mandatory.
QRR
–
0.025
–
μ
C
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相关代理商/技术参数 |
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|---|---|
| NTTS2P02R2/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET -2.4 Amps， -20 Volts |
| NTTS2P02R2_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -2.4 Amps, -20 Volts |
| NTTS2P02R2G | 功能描述:MOSFET 20V 2.4A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTTS2P03R2 | 功能描述:MOSFET -30V -2.48A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTTS2P03R2/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET -2.48 Amps， -30 Volts |
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