参数资料
型号: NTTS2P02R2
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: Power MOSFET -2.4 Amps, -20 Volts Single P–Channel( -2.4 A, -20 V单P通道的功率MOSFET)
中文描述: 2400 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: MINIATURE, CASE 846A-02, MICRO-8
文件页数: 3/8页
文件大小: 82K
代理商: NTTS2P02R2
NTTS2P02R2
http://onsemi.com
3
VGS = –1.5 V
VGS = –1.7 V
VGS = –1.9 V
TJ = 55
°
C
TJ = 25
°
C
VGS = –10 V
VGS = –4.5 V
VGS = –2.5 V
Figure 1. On–Region Characteristics.
Figure 2. Transfer Characteristics.
Figure 3. On–Resistance vs. Gate–to–Source
Voltage.
Figure 4. On–Resistance vs. Drain Current and
Gate Voltage.
Figure 5. On–Resistance Variation with
Temperature.
Figure 6. Drain–to–Source Leakage Current
vs. Voltage.
VGS = –2.1 V
TJ = 25
°
C
TJ = 100
°
C
TJ = 25
°
C
TJ = 25
°
C
VGS = –2.7 V
VGS = –4.5 V
ID = –2.4 A
VGS = –4.5 V
VGS = 0 V
TJ = 125
°
C
TJ = 25
°
C
TJ = 100
°
C
VDS > = 10 V
150
–50
1.6
1.4
–25
0
25
75
1.2
1
0.8
0.6
20
0
1000
100
4
8
12
16
10
1
0.1
0.01
–VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
125
100
50
TJ, JUNCTION TEMPERATURE (
°
C)
1
0.12
0.1
1.5
2
2.5
3.5
0.08
0.06
0.04
4.5
4
3
2
0.2
0.15
4
6
0.1
0.05
0
8
1
5
4
1.5
2
3
2
0
3
0
4
3
6
2
1
0
8
1
2.5
4
2
10
–ID, DRAIN CURRENT (AMPS)
–VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
–VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
–VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
R
R
R
(
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