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参数资料
| 型号： | NTY100N10 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | JFETs |
| 英文描述： | Power MOSFET 123A, 100V N Channel Enhancement Mode TO264 Package(123A，100V双功率MOSFET) |
| 中文描述： | 123 A, 100 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封装： | CASE 340G-02 STYLE 1, TO-3BPL, TO-264, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 157K |
| 代理商： | NTY100N10 |
NTY100N10
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain
Source Breakdown Voltage
(V
= 0, I
= 250 A)
(Positive Temperature Coefficient)
V
(BR)DSS
100
144
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
GS
= 0 Vdc, V
DS
= 100 Vdc, T
J
= 25
°
C)
(V
GS
= 0 Vdc, V
DS
= 100 Vdc, T
J
= 150
°
C)
I
DSS
10
100
Adc
Gate
Body Leakage Current
(V
GS
=
20 Vdc, V
DS
= 0)
I
GSS
100
nAdc
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
(V
= V
, I
= 250 Adc)
(Negative Temperature Coefficient)
V
GS(th)
2.0
3.1
10.6
4.0
Vdc
mV/
°
C
Static Drain
Source On
State Resistance
(V
GS
= 10 Vdc, I
D
= 50 Adc)
(V
GS
= 10 Vdc, I
D
= 50 Adc, 150
°
C)
R
DS(on)
0.009
0.019
0.010
0.021
Drain
Source On
Voltage (V
GS
= 10 Vdc, I
D
= 100 Adc)
V
DS(on)
0.8
1.0
Vdc
Forward Transconductance (V
DS
= 6 Vdc, I
D
= 50 Adc)
g
FS
73
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc, f = 1 MHz)
C
iss
7225
10110
pF
Output Capacitance
C
oss
1800
2540
Reverse Transfer Capacitance
C
rss
270
540
SWITCHING CHARACTERISTICS
(Notes 2, 3)
Turn
On Delay Time
(V
DD
= 50 Vdc, I
D
= 100 Adc,
V
GS
= 10 Vdc, R
G
= 9.1 )
t
d(on)
30
55
ns
Rise Time
t
r
150
265
Turn
Off Delay Time
t
d(off)
340
595
Fall Time
t
f
250
435
Total Gate Charge
(V
DS
= 80 Vdc, I
D
= 100 Adc,
V
GS
= 10 Vdc)
Q
T
200
350
nC
Gate
Source Charge
Q
1
40
Q
2
100
Q
3
86
BODY
DRAIN DIODE RATINGS
(Note 2)
Forward On
Voltage
(I
S
= 100 Adc, V
GS
= 0 Vdc)
(I
S
= 100 Adc, V
GS
= 0 Vdc, T
J
= 150
°
C)
V
SD
1.02
0.94
1.1
Vdc
Reverse Recovery Time
(I
S
= 100 Adc, V
GS
= 0 Vdc, dI
S
/dt = 100 A/ s)
t
rr
210
ns
t
a
155
t
b
55
Reverse Recovery Stored Charge
Q
RR
1.08
C
2. Indicates Pulse Test: Pulse Width
3. Switching characteristics are independent of operating junction temperature.
300 s max, Duty Cycle = 2%.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTY100N10_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 123 A, 100 V N−Channel Enhancement−Mode TO264 Package |
| NTY100N10G | 功能描述:MOSFET 100V 123A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTZA3DVV2 | 制造商:Omron Corporation 功能描述: |
| NTZD3151P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Efficiency DC-DC Converters |
| NTZD3152P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, SOT−563 |
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