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| 型号： | NTZD3155C |
| 厂商： | ON SEMICONDUCTOR |
| 英文描述： | Small Signal MOSFET Complementary 20V, 540mA/430mA, with ESD protection, SOT563 package.(20V，540mA/430mA双功率MOSFET带ESD保护) |
| 中文描述： | 小信号MOSFET互补20V的，540mA/430mA的ESD保护，SOT563封装包。（20V的，540mA/430mA双功率MOSFET的带静电放电保护） |
| 文件页数： | 1/8页 |
| 文件大小： | 156K |
| 代理商： | NTZD3155C |
Semiconductor Components Industries, LLC, 2006
March, 2006
Rev. 1
1
Publication Order Number:
NTZD3155C/D
NTZD3155C
Small Signal MOSFET
Complementary 20 V, 540 mA /
430 mA,
with ESD protection, SOT
563 package.
Features
Leading Trench Technology for Low R
DS(on)
Performance
High Efficiency System Performance
Low Threshold Voltage
ESD Protected Gate
Small Footprint 1.6 x 1.6 mm
These are Pb
Free Devices
Applications
DC
DC Conversion Circuits
Load/Power Switching with Level Shift
Single or Dual Cell Li
Ion Battery Operated Systems
High Speed Circuits
Cell Phones, MP3s, Digital Cameras, and PDAs
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain
to
Source Voltage
V
DSS
V
GS
20
V
Gate
to
Source Voltage
±
6
V
N
Channel Continu-
ous Drain Current
(Note 1)
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
T
A
= 25
°
C
T
A
= 85
°
C
T
A
= 25
°
C
I
D
540
mA
390
t
5 s
570
P
Channel Continu-
ous Drain Current
(Note 1)
Steady
State
430
310
t
5 s
455
Power Dissipation
(Note 1)
Steady
State
T
A
= 25
°
C
P
D
250
mW
t
5 s
280
Pulsed Drain Current
N
Channel
t
p
= 10 s
I
DM
1500
mA
P
Channel
750
Operating Junction and Storage Temperature
T
J
,
T
STG
I
S
55 to
150
°
C
Source Current (Body Diode)
350
mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T
L
260
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface
mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq [1 oz] including traces).
SOT
563
6
CASE 463A
MARKING
DIAGRAM
http://onsemi.com
V
(BR)DSS
R
DS(on)
Typ
I
D
Max
(Note 1)
N
Channel
20 V
0.4 @ 4.5 V
0.5 @ 2.5 V
540 mA
P
Channel
20 V
0.5 @
4.5 V
0.6 @
2.5 V
1.0 @
1.8 V
430 mA
0.7 @ 1.8 V
1
6
TW M
Device
Package
Shipping
ORDERING INFORMATION
NTZD3155CT1G
SOT
563
(Pb
Free)
4000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Top View
D
1
G
2
S
2
S
1
G
1
6
5
4
1
2
3
D
2
PINOUT: SOT
563
NTZD3155CT5G
SOT
563
(Pb
Free)
8000 / Tape & Reel
TW
M
= Specific Device Code
= Date Code
= Pb
Free Package
(Note: Microdot may be in either location)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTZD3155CT1G | 功能描述:MOSFET 20V 540mA/-430mA Complementary w/ESD RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTZD3155CT1G | 制造商:ON Semiconductor 功能描述:DUAL N/P CH MOSFET 20V SOT-563 制造商:ON Semiconductor 功能描述:DUAL N/P CH MOSFET, 20V, SOT-563 |
| NTZD3155CT1H | 制造商:ON Semiconductor 功能描述:COMP SOT563 20V 540MA TR - Tape and Reel 制造商:ON 功能描述:COMP SOT563 20V 540MA TR |
| NTZD3155CT2G | 功能描述:MOSFET COMP 540mA 20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTZD3155CT5G | 功能描述:MOSFET 20V 540mA/-430mA Complementary w/ESD RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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