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参数资料
| 型号： | NTZD3155C |
| 厂商： | ON SEMICONDUCTOR |
| 英文描述： | Small Signal MOSFET Complementary 20V, 540mA/430mA, with ESD protection, SOT563 package.(20V，540mA/430mA双功率MOSFET带ESD保护) |
| 中文描述： | 小信号MOSFET互补20V的，540mA/430mA的ESD保护，SOT563封装包。（20V的，540mA/430mA双功率MOSFET的带静电放电保护） |
| 文件页数： | 4/8页 |
| 文件大小： | 156K |
| 代理商： | NTZD3155C |
NTZD3155C
http://onsemi.com
4
N
CHANNEL TYPICAL PERFORMANCE CURVES
(T
J
= 25
°
C unless otherwise noted)
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
V
DS
, DRAIN
TO
SOURCE VOLTAGE (V)
I
D
,
Figure 1. On
Region Characteristics
1.8 V
V
GS
= 1.6 V
V
GS
= 1.4 V
V
GS
= 1.2 V
V
GS
= 1.0 V
0
0.5
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1.0
V
GS
, GATE
TO
SOURCE VOLTAGE (V)
1.5
2.0
2.5
3.0
I
D
,
Figure 2. Transfer Characteristics
V
DS
10 V
T
J
= 25
°
C
T
J
= 100
°
C
T
J
=
55
°
C
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1
2
3
4
5
6
V
GS
, GATE
TO
SOURCE VOLTAGE (V)
R
D
,
T
S
R
Figure 3. On
Resistance versus
Gate
to
Source Voltage
I
D
= 0.54 A
T
J
= 25
°
C
5.5 V
V
GS
= 2.0 V to 2.2 V
0.3
0.4
0.5
0.6
0.7
0.8
0.9
0.2
0.4
0.6
0.8
1
1.2
I
D
, DRAIN CURRENT (A)
Figure 4. On
Resistance versus Drain Current
and Gate Voltage
R
D
,
T
S
R
T
J
= 25
°
C
V
GS
= 1.8 V
V
GS
= 2.5 V
V
GS
= 4.5 V
T
J
= 25
°
C
0.6
0.8
1
1.2
1.4
1.6
1.8
2
50
25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
°
C)
R
D
,
T
S
R
Figure 5. On
Resistance Variation with
Temperature
I
D
= 0.54 A
V
GS
= 4.5 V
10
100
1000
2
4
6
8
10
12
14
16
18
20
V
DS
, DRAIN
TO
SOURCE VOLTAGE (V)
I
D
,
Figure 6. Drain
to
Source Leakage Current
versus Voltage
T
J
= 150
°
C
T
J
= 100
°
C
V
GS
= 0 V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTZD3155CT1G | 功能描述:MOSFET 20V 540mA/-430mA Complementary w/ESD RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTZD3155CT1G | 制造商:ON Semiconductor 功能描述:DUAL N/P CH MOSFET 20V SOT-563 制造商:ON Semiconductor 功能描述:DUAL N/P CH MOSFET, 20V, SOT-563 |
| NTZD3155CT1H | 制造商:ON Semiconductor 功能描述:COMP SOT563 20V 540MA TR - Tape and Reel 制造商:ON 功能描述:COMP SOT563 20V 540MA TR |
| NTZD3155CT2G | 功能描述:MOSFET COMP 540mA 20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTZD3155CT5G | 功能描述:MOSFET 20V 540mA/-430mA Complementary w/ESD RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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