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参数资料
| 型号： | NTZD3155C |
| 厂商： | ON SEMICONDUCTOR |
| 英文描述： | Small Signal MOSFET Complementary 20V, 540mA/430mA, with ESD protection, SOT563 package.(20V，540mA/430mA双功率MOSFET带ESD保护) |
| 中文描述： | 小信号MOSFET互补20V的，540mA/430mA的ESD保护，SOT563封装包。（20V的，540mA/430mA双功率MOSFET的带静电放电保护） |
| 文件页数： | 3/8页 |
| 文件大小： | 156K |
| 代理商： | NTZD3155C |
NTZD3155C
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise specified)
Parameter
Symbol
N/P
Test Condition
Min
Typ
Max
Unit
CHARGES, CAPACITANCES AND GATE RESISTANCE
Total Gate Charge
Q
G(TOT)
N
V
GS
= 4.5 V, V
DS
=
10 V; I
D
= 540 mA
1.5
2.5
nC
Threshold Gate Charge
Q
G(TH)
0.1
Gate
to
Source Charge
Q
GS
0.2
Gate
to
Drain Charge
Q
GD
0.35
Total Gate Charge
Q
G(TOT)
P
V
GS
=
4.5 V, V
DS
= 10 V; I
D
=
380 mA
1.7
2.5
Threshold Gate Charge
Q
G(TH)
0.1
Gate
to
Source Charge
Q
GS
0.3
Gate
to
Drain Charge
Q
GD
0.4
SWITCHING CHARACTERISTICS (V
GS
= V)
(Note 4)
Turn
On Delay Time
t
d(ON)
N
V
GS
= 4.5 V, V
DD
=
10 V, I
D
= 540 mA,
R
G
= 10
6.0
ns
Rise Time
t
r
4.0
Turn
Off Delay Time
t
d(OFF)
16
Fall Time
t
f
8.0
Turn
On Delay Time
t
d(ON)
P
V
GS
=
4.5 V, V
DD
= 10 V, I
D
=
215 mA,
R
G
= 10
10
Rise Time
t
r
12
Turn
Off Delay Time
t
d(OFF)
35
Fall Time
t
f
19
Drain
Source Diode Characteristics
Forward Diode Voltage
V
SD
N
V
GS
= 0 V, T
J
= 25
°
C
I
S
= 350 mA
0.7
1.2
V
P
I
S
=
350 mA
0.8
1.2
Reverse Recovery Time
t
RR
N
V
GS
= 0 V,
dIS/dt = 100 A/ s
I
S
= 350 mA
6.5
ns
P
I
S
=
350 mA
13
4. Switching characteristics are independent of operating junction temperatures
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTZD3155CT1G | 功能描述:MOSFET 20V 540mA/-430mA Complementary w/ESD RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTZD3155CT1G | 制造商:ON Semiconductor 功能描述:DUAL N/P CH MOSFET 20V SOT-563 制造商:ON Semiconductor 功能描述:DUAL N/P CH MOSFET, 20V, SOT-563 |
| NTZD3155CT1H | 制造商:ON Semiconductor 功能描述:COMP SOT563 20V 540MA TR - Tape and Reel 制造商:ON 功能描述:COMP SOT563 20V 540MA TR |
| NTZD3155CT2G | 功能描述:MOSFET COMP 540mA 20V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTZD3155CT5G | 功能描述:MOSFET 20V 540mA/-430mA Complementary w/ESD RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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