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| 型号： | NTZD3152PT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2P-CH 20V 430MA SOT-563 |
| 产品目录绘图： | MOSFET SOT-563 Pkg |
| 标准包装： | 10 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 430mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 900 毫欧 @ 430mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 175pF @ 16V |
| 功率 - 最大： | 250mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-563，SOT-666 |
| 供应商设备封装： | SOT-563 |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NTZD3152PT1GOSDKR |
NTZD3152P
Small Signal MOSFET
? 20 V, ? 430 mA, Dual P ? Channel
with ESD Protection, SOT ? 563
Features
? Low R DS(on) Improving System Efficiency
? Low Threshold Voltage
? ESD Protected Gate
? Small Footprint 1.6 x 1.6 mm
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
V (BR)DSS
? 20 V
D 1
http://onsemi.com
R DS(on) Typ
0.5 W @ ? 4.5 V
0.6 W @ ? 2.5 V
1.0 W @ ? 1.8 V
I D Max
? 430 mA
D 2
Applications
?
?
?
?
Load/Power Switches
Power Supply Converter Circuits
Battery Management
Cell Phones, Digital Cameras, PDAs, Pagers, etc.
G 1
G 2
P ? Channel
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted.)
Parameter Symbol
Value
Unit
6
S 1
MOSFET S 2
MARKING DIAGRAM
T A = 25 ° C
T A = 85 ° C
TU M G
G
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Continuous Drain Current
(Note 1)
Power Dissipation
(Note 1)
Continuous Drain Current
(Note 1)
Power Dissipation
(Note 1)
Steady
State
Steady State
T A = 25 ° C
t v 5s
T A = 85 ° C
t v 5s
V DSS
V GS
I D
P D
I D
P D
? 20
± 6.0
? 430
? 310
250
? 455
? 328
280
V
V
mA
mW
mA
mW
1
SOT ? 563 ? 6
CASE 463A 1
TU = Specific Device Code
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
PINOUT: SOT ? 563
S 1 1 6 D 1
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
I DM
T J ,
T STG
? 750
? 55 to
150
mA
° C
G 1 2
5 G 2
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
I S
T L
? 350
260
mA
° C
D 2
3
Top View
4 S 2
(Pb ? Free)
THERMAL RESISTANCE RATINGS
Parameter
Junction ? to ? Ambient – Steady State (Note 1)
Junction ? to ? Ambient – t v 5 s (Note 1)
Symbol
R q JA
Max
500
447
Unit
° C/W
ORDERING INFORMATION
Device Package Shipping ?
NTZD3152PT1G SOT ? 563
4000 / Tape & Reel
NTZD3152PT1H
8000 / Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in. sq. pad size
(Cu. area = 1.127 in. sq. [1 oz.] including traces).
NTZD3152PT5H SOT ? 563
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2013
January, 2013 ? Rev. 3
1
Publication Order Number:
NTZD3152P/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTZD3152PT1H | 制造商:ON Semiconductor 功能描述:PFET SOT563 20V 430MA 900 - Tape and Reel 制造商:ON Semiconductor 功能描述:PFET SOT563 20V 430MA TR 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述:REEL / PFET SOT563 20V 430MA TR |
| NTZD3152PT5G | 功能描述:MOSFET -20V -430mA Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTZD3152PT5H | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET −20 V, −430 mA, Dual P−Channel with ESD Protection, SOT−563 |
| NTZD3154N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 20 V, 540 mA, Dual N−Channel |
| NTZD3154NT1G | 功能描述:MOSFET 20V 540mA Dual N-Channel w/ESD RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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