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参数资料
| 型号： | NTZS3151P |
| 厂商： | ON SEMICONDUCTOR |
| 英文描述： | Small Signal MOSFET 20V, 950mA, P Channel SOT563(20V，950mA双功率MOSFET带ESD保护) |
| 中文描述： | 小信号MOSFET 20V的，九五零毫安，P通道SOT563封装（20V的，九五零毫安双功率MOSFET的带静电放电保护） |
| 文件页数： | 3/5页 |
| 文件大小： | 130K |
| 代理商： | NTZS3151P |
NTZS3151P
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES
(T
J
= 25
°
C unless otherwise noted)
1 V
125
°
C
0
4
2.5
2.5
3
1.5
1
V
DS
, DRAIN
TO
SOURCE VOLTAGE (VOLTS)
I
D
D
1.5
0.5
0
0.5
Figure 1. On
Region Characteristics
0.5
4
2
1.5
3
3.5
1.5
0.5
1
0
0
Figure 2. Transfer Characteristics
V
GS
, GATE
TO
SOURCE VOLTAGE (VOLTS)
0.1
3
0.2
0
Figure 3. On
Resistance vs. Drain Current and
Temperature
I
D,
DRAIN CURRENT (AMPS)
R
D
D
T
S
I
D
D
0
0.1
Figure 4. On
Resistance vs. Drain Current and
Gate Voltage
I
D,
DRAIN CURRENT (AMPS)
50
0
25
25
1.4
1.2
1
0.8
0.6
50
125
100
Figure 5. On
Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
°
C)
T
J
= 25
°
C
2
0
T
J
=
55
°
C
0.3
0
75
150
T
J
= 25
°
C
I
D
=
0.95 A
V
GS
=
4.5 V
R
D
D
T
S
R
2
25
°
C
R
D
D
T
S
1.8
V
GS
=
1.8 V
1.2 V
1
4
1.4 V
1.6 V
0.2
V
GS
=
2.5 V
3.5
5
V
DS
≥
10 V
0.3
0.5
1
1.5
V
GS
=
3 V
V
GS
=
2 V
Figure 6. Drain
to
Source Leakage Current
vs. Voltage
0
20
15
V
DS
, DRAIN
TO
SOURCE VOLTAGE (VOLTS)
V
GS
= 0 V
I
D
,
T
J
= 150
°
C
T
J
= 125
°
C
100
1000
10000
5
10
2
2.5
3
3.5
4
3.5
4
4.5
2.5
V
GS
=
4.5 V
T
J
= 25
°
C
T
J
= 125
°
C
T
J
=
55
°
C
V
GS
=
4.5 V
1.6
3
2
1
1.8 V
2.5
3
2
1
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