参数资料
型号: NTZS3151P
厂商: ON SEMICONDUCTOR
英文描述: Small Signal MOSFET 20V, 950mA, P Channel SOT563(20V,950mA双功率MOSFET带ESD保护)
中文描述: 小信号MOSFET 20V的,九五零毫安,P通道SOT563封装(20V的,九五零毫安双功率MOSFET的带静电放电保护)
文件页数: 4/5页
文件大小: 130K
代理商: NTZS3151P
NTZS3151P
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES
(T
J
= 25
°
C unless otherwise noted)
V
GS
0
6
3
4
1
0
Q
G
, TOTAL GATE CHARGE (nC)
V
G
G
T
S
I
D
=
0.77 A
T
J
= 25
°
C
5
2
3
V
D
D
T
S
30
10
0
Q
GD
10
1
10
1
100
R
G
, GATE RESISTANCE ( )
t
V
DD
=
25 V
I
D
=
0.95 A
V
GS
=
4.5 V
1000
5
20
t
d(off)
t
d(on)
t
f
t
r
V
DS
4
1
0.9
0.2
0
0.1
V
SD
, SOURCE
TO
DRAIN VOLTAGE (VOLTS)
I
S
,
V
GS
= 0 V
T
J
= 25
°
C
1.2
0.7
0.5
0.4
Figure 7. Capacitance Variation
Figure 8. Gate
to
Source and
Drain
to
Source Voltage vs. Total Charge
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
2
QT
0.8
0.6
0.4
15
5
25
Q
GS
V
DS
= 0 V
V
GS
= 0 V
5
10
10
1000
300
200
100
0
25
GATE
TO
SOURCE OR DRAIN
TO
SOURCE VOLTAGE (VOLTS)
C
T
J
= 25
°
C
C
OSS
C
ISS
C
RSS
500
5
0
400
V
GS
V
DS
15
600
700
800
900
20
100
0.3
0.2
0.6
0.8
1.0
ORDERING INFORMATION
Device
Package
Shipping
NTZS3151PT1G
SOT
563
(Pb
Free)
4000 / Tape & Reel
NTZS3151PT5G
SOT
563
(Pb
Free)
8000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifi-
cations Brochure, BRD8011/D.
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