参数资料
型号: NUD3105DMT1
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: Integrated Relay, Inductive Load Driver
中文描述: 500 mA, 6 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: CASE 318F-05, SC-74, 6 PIN
文件页数: 5/8页
文件大小: 81K
代理商: NUD3105DMT1
NUD3105D
http://onsemi.com
5
TYPICAL CHARACTERISTICS
V
DS
, DRAINTOSOURCE VOLTAGE (V)
Figure 10. Safe Operating Area for NUD3105DLT1
0.01
100
10
0.1
0.1
1.0
0.01
I
D
,
1.0
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
I
D
, DRAIN CURRENT (A)
Figure 8. OnResistance vs. Drain Current and
Temperature
TEMPERATURE (
°
C)
Figure 9. Gate Leakage vs. Temperature
R
D
,
R1.0
0.9
0.8
0.5
0.6
0.7
1.1
1.2
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
I
G
,
30
25
0
50
5
10
35
40
25
0
25
50
75
100
125
20
15
125
°
C
85
°
C
50
°
C
25
°
C
40
°
C
V
GS
= 3.0 V
V
GS
= 5.0 V
Figure 11. Transient Thermal Response for NUD3105DLT1
0.01
0.1
1.0
10
100
1000
10,000
100,000
1,000,000
D = 0.5
0.2
0.1
0.05
0.02
SINGLE PULSE
0.01
P
d(pk)
t
1
t
2
DUTY CYCLE = t
1
/t
2
PERIOD
PW
r
R
1.0
0.1
0.01
0.001
t1, PULSE WIDTH (ms)
DC
PW = 0.1 s
DC = 50%
PW = 7.0 ms
DC = 5%
PW = 10 ms
DC = 20%
Typical
I
Z
vs. V
Z
V
(BR)DSS
min = 6.0 V
I
DContinuous
= 0.5 A
V
GS
= 3.0 V, T
C
= 25
°
C
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