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参数资料
| 型号： | NUD3105DMT1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Integrated Relay, Inductive Load Driver |
| 中文描述： | 500 mA, 6 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | CASE 318F-05, SC-74, 6 PIN |
| 文件页数： | 6/8页 |
| 文件大小： | 81K |
| 代理商： | NUD3105DMT1 |
NUD3105D
http://onsemi.com
6
Designing with this Data Sheet
1. Determine the maximum inductive load current (at
max V
CC
, min coil resistance & usually minimum
temperature) that the NUD3105D will have to
drive and make sure it is less than the max rated
current.
2. For pulsed operation, use the Transient Thermal
Response of Figure 11 and the instructions with it
to determine the maximum limit on transistor
power dissipation for the desired duty cycle and
temperature range.
3. Use Figures 10 and 11 with the SOA notes to
insure that instantaneous operation does not push
the device beyond the limits of the SOA plot.
4. Verify that the circuit driving the gate will meet
the V
GS(th)
from the Electrical Characteristics
table.
5. Using the max output current calculated in step 1,
check Figure 7 to insure that the range of Zener
clamp voltage over temperature will satisfy all
system & EMI requirements.
6. Use I
GSS
and I
DSS
from the Electrical
Characteristics table to insure that “OFF” state
leakage over temperature and voltage extremes
does not violate any system requirements.
7. Review circuit operation and insure none of the
device max ratings are being exceeded.
Figure 12. A 200 mW, 5.0 V Dual Coil Latching Relay Application
with 3.0 V Level Translating Interface
+4.5
≤
V
CC
≤
+5.5 Vdc
+
V
out
(6)
+
V
in
(2)
GND (1)
NUD3105DDMT1
+3.0
≤
V
DD
≤
+3.75 Vdc
APPLICATIONS DIAGRAMS
V
out
(3)
V
in
(5)
GND (4)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NUD3105DMT1G | 功能描述:MOSFET 5V Dual Integrated Relay Inductive Load RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NUD3105DMT1G-CUT TAPE | 制造商:ON 功能描述:NUD Series 6 V 500 mA SMT Integrated Relay Inductive Load Driver - SC-74 |
| NUD3105LT1 | 功能描述:MOSFET 8V Inductive Load RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NUD3105LT1G | 功能描述:MOSFET 8V Inductive Load RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NUD3112 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Integrated Relay, Inductive Load Driver |
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