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参数资料
| 型号： | NUD3105LT1 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Integrated Relay, Inductive Load Driver |
| 中文描述： | 500 mA, 6 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 |
| 封装： | CASE 318-08, 3 PIN |
| 文件页数： | 2/8页 |
| 文件大小： | 77K |
| 代理商： | NUD3105LT1 |
NUD3105
http://onsemi.com
2
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise specified)
Symbol
Rating
Value
Unit
V
DSS
Drain to Source Voltage Continuous
6.0
V
dc
V
GS
Gate to Source Voltage – Continuous
6.0
V
dc
I
D
Drain Current – Continuous
500
mA
E
z
Single Pulse DraintoSource Avalanche Energy (
T
Jinitial =
25
°
C) (Note 2)
50
mJ
E
zpk
T
J
Repetitive Pulse Zener Energy Limit (DC
0.01%) (f = 100 Hz, DC = 0.5)
4.5
mJ
Junction Temperature
150
°
C
T
A
Operating Ambient Temperature
40 to 85
°
C
T
stg
Storage Temperature Range
65 to +150
°
C
P
D
Total Power Dissipation (Note 1)
Derating Above 25
°
C
225
1.8
mW
mW/
°
C
R
JA
Thermal Resistance JunctiontoAmbient
556
°
C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. This device contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per MIL_STD883, Method 3015.
Machine Model Method 200 V.
2. Refer to the section covering Avalanche and Energy.
TYPICAL ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Symbol
Characteristic
Min
Typ
Max
Unit
OFF CHARACTERISTICS
V
BRDSS
Drain to Source Sustaining Voltage (Internally Clamped)
(ID = 10 mA)
6.0
8.0
9.0
V
B
VGSO
I
g
= 1.0 mA
8.0
V
I
DSS
Drain to Source Leakage Current
(V
DS
= 5.5 V , V
GS
= 0 V, T
J
= 25
°
C)
(V
DS
= 5.5 V, V
GS
= 0 V, T
J
= 85
°
C )
15
15
A
I
GSS
Gate Body Leakage Current
(V
GS
= 3.0 V, V
DS
= 0 V)
(V
GS
= 5.0 V, V
DS
= 0 V)
5.0
19
50
A
ON CHARACTERISTICS
V
GS(th)
Gate Threshold Voltage
(V
GS
= V
DS
, I
D
= 1.0 mA)
(V
GS
= V
DS
, I
D
= 1.0 mA, T
J
= 85
°
C)
0.8
0.8
1.2
1.4
1.4
V
R
DS(on)
Drain to Source OnResistance
(I
D
= 250 mA, V
GS
= 3.0 V)
(I
D
= 500 mA, V
GS
= 3.0 V)
(I
D
= 500 mA, V
GS
= 5.0 V)
(I
D
= 500 mA, V
GS
= 3.0 V, T
J
=85
°
C)
(I
D
= 500 mA, V
GS
= 5.0 V, T
J
=85
°
C)
1.2
1.3
0.9
1.3
0.9
I
DS(on)
Output Continuous Current
(V
DS
= 0.25 V, V
GS
= 3.0 V)
(V
DS
= 0.25 V, V
GS
= 3.0 V, T
J
= 85
°
C)
300
200
400
mA
g
FS
Forward Transconductance
(V
OUT
= 5.0 V, I
OUT
= 0.25 A)
350
570
mmhos
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
(V
DS
= 5.0 V,V
GS
= 0 V, f = 10 kHz)
25
pF
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