参数资料
型号: NUD3105LT1
厂商: ON SEMICONDUCTOR
元件分类: 小信号晶体管
英文描述: Integrated Relay, Inductive Load Driver
中文描述: 500 mA, 6 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236
封装: CASE 318-08, 3 PIN
文件页数: 6/8页
文件大小: 77K
代理商: NUD3105LT1
NUD3105
http://onsemi.com
6
Designing with this Data Sheet
1. Determine the maximum inductive load current (at
max V
CC
, min coil resistance & usually minimum
temperature) that the NUD3105 will have to drive
and make sure it is less than the max rated current.
2. For pulsed operation, use the Transient Thermal
Response of Figure 11 and the instructions with it
to determine the maximum limit on transistor
power dissipation for the desired duty cycle and
temperature range.
3. Use Figures 10 and 11 with the SOA notes to
insure that instantaneous operation does not push
the device beyond the limits of the SOA plot.
4. Verify that the circuit driving the gate will meet
the V
GS(th)
from the Electrical Characteristics
table.
5. Using the max output current calculated in step 1,
check Figure 7 to insure that the range of Zener
clamp voltage over temperature will satisfy all
system & EMI requirements.
6. Use I
GSS
and I
DSS
from the Electrical
Characteristics table to insure that “OFF” state
leakage over temperature and voltage extremes
does not violate any system requirements.
7. Review circuit operation and insure none of the
device max ratings are being exceeded.
Figure 12. A 200 mW, 5.0 V Dual Coil Latching Relay Application
with 3.0 V Level Translating Interface
+4.5
V
CC
+5.5 Vdc
+
V
out
(3)
+
V
in
(1)
GND (2)
NUD3105LT1
+3.0
V
DD
+3.75 Vdc
APPLICATIONS DIAGRAMS
V
out
(3)
V
in
(1)
GND (2)
NUD3105LT1
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