- 您现在的位置：买卖IC网 > PDF目录22296 > NUD3124DMT1G (ON Semiconductor)IC INDCT LOAD DRVR AUTO SC74-6 PDF资料下载
参数资料
| 型号： | NUD3124DMT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | IC INDCT LOAD DRVR AUTO SC74-6 |
| 标准包装： | 1 |
| 系列： | MicroIntegration™ |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 2 |
| 导通状态电阻： | 1.4 欧姆 |
| 电流 - 输出 / 通道： | 200mA |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | SC-74 |
| 包装： | 标准包装 |
| 产品目录页面： | 1118 (CN2011-ZH PDF) |
| 其它名称： | NUD3124DMT1GOSDKR |
NUD3124, SZNUD3124
MAXIMUM RATINGS (T J = 25 ° C unless otherwise specified)
Symbol
V DSS
V GSS
I D
E Z
P PK
E LD1
E LD2
E LD3
Rev ? Bat
Rating
Drain ? to ? Source Voltage – Continuous
(T J = 125 ° C)
Gate ? to ? Source Voltage – Continuous
(T J = 125 ° C)
Drain Current – Continuous
(T J = 125 ° C)
Single Pulse Drain ? to ? Source Avalanche Energy
(For Relay’s Coils/Inductive Loads of 80 W or Higher)
(T J Initial = 85 ° C)
Peak Power Dissipation, Drain ? to ? Source (Notes 1 and 2)
(T J Initial = 85 ° C)
Load Dump Suppressed Pulse, Drain ? to ? Source (Notes 3 and 4)
(Suppressed Waveform: V s = 45 V, R SOURCE = 0.5 W , T = 200 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher)
(T J Initial = 85 ° C)
Inductive Switching Transient 1, Drain ? to ? Source
(Waveform: R SOURCE = 10 W , T = 2.0 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher)
(T J Initial = 85 ° C)
Inductive Switching Transient 2, Drain ? to ? Source
(Waveform: R SOURCE = 4.0 W , T = 50 m s)
(For Relay’s Coils/Inductive Loads of 80 W or Higher)
(T J Initial = 85 ° C)
Reverse Battery, 10 Minutes (Drain ? to ? Source)
Value
28
12
150
250
20
80
100
300
? 14
Unit
V
V
mA
mJ
W
V
V
V
V
(For Relay’s Coils/Inductive Loads of 80 W or more)
Dual ? Volt
ESD
Dual Voltage Jump Start, 10 Minutes (Drain ? to ? Source)
Human Body Model (HBM)
28
2,000
V
V
According to EIA/JESD22/A114 Specification
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Nonrepetitive current square pulse 1.0 ms duration.
2. For different square pulse durations, see Figure 2.
3. Nonrepetitive load dump suppressed pulse per Figure 3.
4. For relay’s coils/inductive loads higher than 80 W , see Figure 4.
http://onsemi.com
2
相关PDF资料 |
PDF描述 |
|---|---|
| ACB64DHNT | CONN EDGECARD 128PS .050 DIP SLD |
| LT1123CZ#PBF | IC REG CTRLR SGL 5V TO-92-3 |
| ABB64DHNT | CONN EDGECARD 128PS .050 DIP SLD |
| AISC-0402-7N5G-T | INDUCTOR CHIP 7.5NH 2% SMD |
| LT1123CZ | IC REG CTRLR SGL 5V TO-92-3 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NUD3124DMT1G/H | 制造商:ON Semiconductor 功能描述: |
| NUD3124DMT1G-CUT TAPE | 制造商:ON 功能描述:NUD Series 12 V 150 mA SMT Automotive Inductive Load Driver - SC-74 |
| NUD3124LT1 | 功能描述:MOSFET 28V Industrial Relay RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NUD3124LT1G | 功能描述:MOSFET 28V Industrial Relay Inductive Load RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NUD3124LT1G/H | 制造商:ON Semiconductor 功能描述: |
发布紧急采购，3分钟左右您将得到回复。