参数资料
| 型号： | NUD3160LT1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | IC INDCT LOAD DRVR INDUST SOT23 |
| 标准包装： | 1 |
| 系列： | MicroIntegration™ |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 2.4 欧姆 |
| 电流 - 输出 / 通道： | 200mA |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 剪切带 (CT) |
| 其它名称： | NUD3160LT1OSCT |
NUD3160, SZNUD3160
MAXIMUM RATINGS (T J = 25 ° C unless otherwise specified)
Symbol
V DSS
V GSS
I D
E Z
P PK
E LD1
E LD2
E LD3
Rev ? Bat
Rating
Drain ? to ? Source Voltage – Continuous (T J = 125 ° C)
Gate ? to ? Source Voltage – Continuous (T J = 125 ° C)
Drain Current – Continuous (T J = 125 ° C)
Minimum copper, double sided board, T A = 80 ° C
SOT ? 23
SC74 Single device driven
SC74 Both devices driven
1 in 2 copper, double sided board, T A = 25 ° C
SOT ? 23
SC74 Single device driven
SC74 Both devices driven
Single Pulse Drain ? to ? Source Avalanche Energy
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (T J Initial = 85 ° C)
Peak Power Dissipation, Drain ? to ? Source (Notes 1 and 2)
(T J Initial = 85 ° C)
Load Dump Pulse, Drain ? to ? Source (Note 3)
R SOURCE = 0.5 W , T = 300 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (T J Initial = 85 ° C)
Inductive Switching Transient 1, Drain ? to ? Source
(Waveform: R SOURCE = 10 W , T = 2.0 ms)
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (T J Initial = 85 ° C)
Inductive Switching Transient 2, Drain ? to ? Source
(Waveform: R SOURCE = 4.0 W , T = 50 m s)
(For Relay’s Coils/Inductive Loads of 80 W or Higher) (T J Initial = 85 ° C)
Reverse Battery, 10 Minutes (Drain ? to ? Source)
Value
60
12
158
157
132 ea
272
263
230 ea
200
20
60
100
300
? 14
Unit
V
V
mA
mJ
W
V
V
V
V
(For Relay’s Coils/Inductive Loads of 80 W or more)
Dual ? Volt
ESD
Dual Voltage Jump Start, 10 Minutes (Drain ? to ? Source)
Human Body Model (HBM)
28
2000
V
V
According to EIA/JESD22/A114 Specification
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
http://onsemi.com
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NUD3160LT1G | 功能描述:MOSFET 61V Industrial Load Driver RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NUD3212/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Integrated NPN Transistor with Free Wheeling Diode to Drive Inductive Loads |
| NUD3XX | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:AC-DC Offline Switching Controllers/Regulators |
| NUD4001 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Current LED Driver |
| NUD4001/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:High Current LED Driver |
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