参数资料
| 型号： | NUS3116MTR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET MAIN SW DUAL BJT 8-DFN |
| 标准包装： | 1 |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 工作温度： | -55°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN（3x3） |
| 包装： | 剪切带 (CT) |
| 其它名称： | NUS3116MTR2GOSCT |
NUS3116MT
Main Switch Power
MOSFET and Dual Charging
BJT
-12 V, -6.2 A, m Cool E Single P-Channel
with Dual PNP low V ce(sat) Transistors,
3x3 mm WDFN Package
http://onsemi.com
MOSFET
This device integrates one high performance power MOSFET and
two low V ce(sat) transistors, greatly reducing the layout space and
optimizing charging performance in the battery-powered portable
electronics.
Features
? High Performance Power MOSFET
? Dual-Low V ce(sat) Transistors as Charging Power Mux
? 3.0x3.0x0.8 mm WDFN Package
? Independent Pin-out Provides Circuit Flexibility
? Low Profile (<0.8 mm) for Easy Fit in Thin Environments
? This is a Pb-Free Device
Applications
? Main Switch and Battery Charging Mux for Portable Electronics
? Optimized for Commercial PMUs from Top Suppliers (See Figure 2)
V (BR)DSS
-12 V
V CEO MAX
-30 V
V CEO MAX
-30 V
R DS(on) TYP
32 m W @ -4.5 V
44 m W @ -2.5 V
Low V ce(sat) PNP (Wall)
V EBO MAX
-8.0 V
Low V ce(sat) PNP (USB)
V EBO MAX
-8.0 V
I D MAX
-6.2 A
I C MAX
-2.0 A
I C MAX
-2.0 A
8
MARKING DIAGRAM
1
1
3116
1
2
C
8
7
DFN8
CASE 506BC
3116 = Device Code
AYWW G
G
A = Assembly Location
Y = Year
WW = Work Week
3
4
D
6
5
G = Pb-Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
m COOL ? 3x3 Pin Connections
(Top View)
Figure 1. Simple Schematic
Device
NUS3116MTR2G
Package
WDFN8
(Pb-Free)
Shipping ?
3000/Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2007
May, 2007 - Rev. 0
Publication Order Number:
NUS3116MT/D
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