参数资料
| 型号： | NUS3116MTR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET MAIN SW DUAL BJT 8-DFN |
| 标准包装： | 1 |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 工作温度： | -55°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN（3x3） |
| 包装： | 剪切带 (CT) |
| 其它名称： | NUS3116MTR2GOSCT |
NUS3116MT
P-Channel Power MOSFET Maximum Ratings (T J = 25 ° C unless otherwise stated)
Drain-to-Source Voltage
Gate-to-Source Voltage
Parameter
Symbol
V DSS
V GS
Value
-12
± 8.0
Units
V
V
Continuous Drain Current (Note 1)
Steady State
T A = 25 ° C
I D
-5.47
A
T A = 85 ° C
-4.0
t ≤ 5s
T A = 25 ° C
-6.2
Power Dissipation (Note 1)
Continuous Drain Current (Note 2, Minimum Pad)
Steady State
t ≤ 5s
Steady State
T A = 25 ° C
T A = 25 ° C
P D
I D
1.7
2.2
-4.4
W
A
T A = 85 ° C
-3.2
Power Dissipation (Note 2)
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode) 2
Lead Temperature for Soldering Purposes (1/8 ″ from case for 10 s)
T A = 25 ° C
t p = 10 m s
P D
I DM
T J , T STG
I S
T L
1.14
-25
-55 to 150
-2.8
260
W
A
° C
A
° C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient – Steady State (Note 2)
Junction-to-Ambient – t < 10 s (Note 2)
Junction-to-Ambient – Steady State (Note 1)
Junction-to-Ambient – t < 10 s (Note 1)
Symbol
R q JA
R q JA
R q JA
R q JA
Max
110
56
72
40
Units
° C/W
° C/W
° C/W
° C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
2. Surface-mounted on FR4 board using the minimum recommended pad size of 0.5 in sq, 1 oz. Cu.
P-Channel MOSFET Electrical Characteristics (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown
Voltage Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = -250 m A
I D = -250 m A, ref to 25 ° C
-12.0
-10.1
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
T J = 25 ° C
-1.0
m A
V DS = -12 V
T J = 125 ° C
-10
Gate-to-Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 8 V
± 200
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = -250 m A
-0.45
-0.67
-1.1
V
Negative Threshold Temperature
V GS(TH) /T J
2.68
mV/ ° C
Coefficient
Drain-to-Source On Resistance
R DS(on)
V GS = -4.5 V, I D = -3.0 A
32
40
m W
V GS = -2.5 V, I D = -3.0 A
44
50
Forward Transconductance
g FS
V DS = -16 V, I D = -3.0 A
5.9
S
3. Pulsed Condition: Pulse Width = 300 m sec, Duty Cycle ≤ 2%
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