参数资料
| 型号： | NUS3116MTR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/10页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET MAIN SW DUAL BJT 8-DFN |
| 标准包装： | 1 |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 工作温度： | -55°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN（3x3） |
| 包装： | 剪切带 (CT) |
| 其它名称： | NUS3116MTR2GOSCT |
NUS3116MT
P-Channel MOSFET Electrical Characteristics (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
C ISS
C OSS
C RSS
Q G(tot)
Q G(th)
Q GS
Q GD
V GS = 0 V, f = 1.0 MHz,
V DS = -12 V
V GS = -4.5 V, V DS = -12 V,
I D = -3.0 A
1329
200
116
13
1.5
2.2
2.9
pF
nC
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Of f Delay Time
Fall Time
t d(on)
t r
t d(off)
t f
V GS = -4.5 V, V DD = -12 V,
I D = -3.0 A, R G = 3.0
8
17.5
80
56.5
ns
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Recovery Voltage
V SD
V GS = 0 V,
T J = 25 ° C
-0.66
-1.2
V
I S = -1.0 A
T J = 125 ° C
-0.54
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t rr
t a
t b
Q RR
V GS = 0 V,
dISD/dt = 100 A/ m s,
I S = -1.0 A
70.8
14.3
56.4
44
ns
nC
3. Pulsed Condition: Pulse Width = 300 m sec, Duty Cycle ≤ 2%
Dual-PNP Transistors Maximum Ratings (T J = 25 ° C unless otherwise stated)
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continous
Collector Current, Pulsed (Note 4)
Operating Junction and Storage Temperature
Thermal Resistance Dissipation
Thermal Resistance (Note 5)
Thermal Resistance Dissipation
Thermal Resistance (Note 6)
Symbol
V CEO
V CBO
V EBO
I C
I C
T J , T STG
P D
R q JA
P D
R q JA
Value
-30
-30
-8.0
-2.0
-6.0
-55 to 150
1.5
83
810
155
Units
V
V
V
A
A
° C
W
° C/W
mW
° C/W
4. Single Pulse: Pulse Width = 1 ms
5. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces)
6. Surface-mounted on FR4 board using the minimum recommended pad size of 100 mm 2 , 1 oz. Cu.
http://onsemi.com
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