参数资料
| 型号： | NUS3116MTR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/10页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET MAIN SW DUAL BJT 8-DFN |
| 标准包装： | 1 |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 工作温度： | -55°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-WDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN（3x3） |
| 包装： | 剪切带 (CT) |
| 其它名称： | NUS3116MTR2GOSCT |
NUS3116MT
Dual-PNP Transistors Electrical Characteristics (T J = 25 ° C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
OFF CHARACTERISTICS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector-Emitter Cutoff Current
V CEO
V CBO
V EBO
I CES
I C = -10 mA, I B = 0
I C = -0.1 mA, I E = 0
I E = -0.1 mA, I C = 0
V CES = -30 V
-30
-30
-8.0
-0.1
V
V
V
m A
ON CHARACTERISTICS
DC Current Gain (Note 7)
DC Current Gain (Note 7)
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
h FE
h FE
V CE(sat)
V CE(sat)
V CE(sat)
I C = -1.0 A, V CE = -2.0 V
I C = -2.0 A, V CE = -2.0 V
I C = -1.0 A, I B = -0.01 A
I C = -1.0 A, I B = -0.1 A
I C = -2.0 A, I B = -0.2 A
100
100
200
200
0.22
0.12
0.24
-
-
V
V
V
Input Capacitance
Output Capacitance
C ibo
C obo
V EB = -0.5 V, f = 1.0 MHz
V CB = -3.0 V, f = 1.0 MHz
240
50
400
100
pF
pF
7. Pulsed Condition: Pulse Width = 300 m sec, Duty Cycle ≤ 2%
from WALL
1
8
CHR_ctl
C
from USB
2
7
USB_ctl
3
D
6
BAT_FET_N
R_sns
Supply
Voltage
V DD
4
Figure 2. Typical Application Circuit
http://onsemi.com
4
5
Main Battery
相关PDF资料 |
PDF描述 |
|---|---|
| NX1117C33Z,115 | IC REG LDO 3.3V 1A SOT-223 |
| O/B+BOX | CONN WIRENUT 12-22AWG ORANGE/BLU |
| OCP-PCP116-TR | OPTOCOUPLER DIGITAL OUTPUT SMD |
| OCP-PCP116 | OPTOCOUPLER DIGITAL OUTPUT 6-DIP |
| OCP-PCT114/C | PHOTOCOUP 1-CH TRANSOUT 4DIP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NUS5530MN | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor |
| NUS5530MNR2G | 功能描述:MOSFET INTEGRATED POWER BJT RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NUS5531MT | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Main Switch Power MOSFET and Single Charging BJT |
| NUS5531MTR2G | 功能描述:MOSFET 12V PFET W 20V PNP RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NUS6160MN | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Low Profile Overvoltage Protection IC with Integrated MOSFET |
发布紧急采购，3分钟左右您将得到回复。