参数资料
型号: NUD4011
厂商: ON SEMICONDUCTOR
英文描述: Low Current LED Driver(低电流LED驱动器)
中文描述: 低电流LED驱动器(低电流的LED驱动器)
文件页数: 2/9页
文件大小: 133K
代理商: NUD4011
NUD4011
http://onsemi.com
2
MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Input Voltage
V
in
200
V
Output Current
(For V
drop
16 V) (Note 1)
I
out
70
mA
Output Voltage
V
out
198
V
Human Body Model (HBM)
ESD
500
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. V
drop
= V
in
– 0.7 V
V
LEDs
.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Operating Ambient Temperature
T
A
40 to +125
°
C
Maximum Junction Temperature
T
J
150
°
C
Storage Temperature
T
STG
55 to +150
°
C
Total Power Dissipation (Note 2)
Derating above 25
°
C (Figure 3)
P
D
1.13
9.0
W
mW/
°
C
Thermal Resistance, Junction–to–Ambient (Note 2)
R
JA
110
°
C/W
Thermal Resistance, Junction–to–Lead (Note 2)
R
JL
77
°
C/W
2. Mounted on FR
4 board, 2 in sq pad, 1 oz coverage.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Output Current1 (Note 3)
(V
in
= 120 Vdc, R
ext
= 24 , V
LEDs
= 90 V)
I
out1
26.0
27.5
29.5
mA
Output Current2 (Note 3)
(V
in
= 200 Vdc, R
ext
= 68 , V
LEDs
= 120 V)
I
out2
11.5
14.0
15.5
mA
Bias Current
(V
in
= 120 Vdc, R
ext
= Open, R
shunt
= 80 k )
I
Bias
1.1
2.0
mA
Voltage Overhead (Note 4)
V
over
5.0
V
3. Device’s pin 4 connected to the LEDs array (as shown in Figure 5).
4. V
over
= V
in
– V
LEDs
.
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