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| 型号： | NUF2900MNT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | IC EMI FILTER 2LINE ESD 8-DFN |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 1 |
| 类型： | 低通 |
| 技术： | RC（Pi） |
| 通道数： | 2 |
| 中心 / 截止频率： | 350MHz（截止值） |
| 衰减值： | 30dB @ 800MHz ~ 6GHz |
| 电阻 - 通道 (Ohms)： | 3.6 |
| 值： | R = 3.6 欧姆，C = 33pF，L = 22.1nH |
| ESD 保护： | 是 |
| 滤波器阶数： | 2nd |
| 应用： | 移动设备的数据线路 |
| 封装/外壳： | 8-VFDFN 裸露焊盘 |
| 尺寸/尺寸： | 0.079" L x 0.079" W（2.00mm x 2.00mm） |
| 高度： | 0.039"（1.00mm） |
| 包装： | 剪切带 (CT) |
| 工作温度： | -40°C ~ 85°C |
| 其它名称： | NUF2900MNT1GOSCT |
NUF2900MN
MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
ESD Discharge IEC61000?4?2
Contact Discharge
V PP
5.0
kV
Operating Temperature Range
Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 s)
T OP
T stg
T L
?40 to 85
?55 to 150
260
° C
° C
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Maximum Reverse Working Voltage
V RWM
5.0
V
Breakdown Voltage
Leakage Current
Resistance
I R = 1.0 mA
V RWM = 3.3 V
V BR
I R
R A
6.0
7.0
3.6
8.3
0.1
5.0
V
m A
W
Effective Capacitance (Note 1)
Inductance
Capacitance (Note 2)
C eff
L
C line
10.4
22.1
33
pF
nH
pF
Cut?Off Frequency (Note 3)
Above this frequency,
f 3dB
350
MHz
appreciable attenuation occurs
1. Refer to “Effective Capacitance Calculation” below.
2. Measured at 25 ° C, V R = 0 V, f = 1.0 MHz.
3. 50 W source and 50 W load termination.
ln 1 * V OUT
Effective Capacitance Calculation
The capacitance of the NUF2900MN can be determined
a number of ways. When evaluated using low frequency, low
current capacitance measurement equipment C LINE (line
capacitance), it is determined to be approximately 33 pF.
CEffective +
CEffective +
R
50
* t
V
IN
* 1.08ns
ln(1 * 0.88)
When used in systems that have signal rise and fall times of
1 ns or less C EFFECTIVE (effective capacitance), it is closer
to 10.4 pF.
If the rise and fall times of a signal is determined by the
R Source
V IN
NUF2900MN
V OUT
capacitance of the NUF2900MN, then an “effective”
capacitance can be calculated using the following function
+
based on a simple “RC” combination.
* t
V OUT + V IN 1 * e R Termination C Effective
V Source
C Effective
R Termination
The rise time “t” is approximately 1.08 ns with V OUT ～
88% of V IN where the network impedance is 50 W . When
solving for C EFFECTIVE , the capacitance is found to be
10.4 pF.
If the data signal source has a rise and fall time slower than
1 ns, the NUF2900MN will have a filtered output with a
similar rise and fall time. C EFFECTIVE will scale accordingly
as rise/fall times increase until it reaches C LINE .
http://onsemi.com
2
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