参数资料
型号: NUP1301U,115
厂商: NXP Semiconductors
文件页数: 3/13页
文件大小: 0K
描述: IC DIODE ARRAY ESD SC-70
标准包装: 1
电压 - 反向隔离(标准值): 80V
电压 - 击穿: 100V
功率(瓦特): 220W
电极标记: 单向
安装类型: 表面贴装
封装/外壳: SC-70,SOT-323
供应商设备封装: SC-70
包装: 标准包装
其它名称: 568-8409-6
NXP Semiconductors
NUP1301
Ultra low capacitance ESD protection array
Table 5. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
I FSM
Parameter
non-repetitive peak
forward current
Conditions
square wave
t p = 1 μ s
t p = 1 ms
t p = 1 s
Min
-
-
-
Max
4
1
0.5
Unit
A
A
A
Per device
P PP
I PP
P tot
T j
T amb
T stg
peak pulse power
peak pulse current
total power dissipation
junction temperature
ambient temperature
storage temperature
t p = 8/20 μ s
t p = 8/20 μ s
T amb ≤ 25 ° C
[3][4]
[3][4]
[5][6]
-
-
-
-
? 55
? 65
220
11
250
150
+150
+150
W
A
mW
° C
° C
° C
[1]
[2]
[3]
[4]
[5]
[6]
Pulse test: t p ≤ 300 μ s; δ ≤ 0.02.
T j = 25 ° C prior to surge.
Non-repetitive current pulse 8/20 μ s exponential decay waveform according to IEC 61000-4-5.
Measured from pin 3 to pins 1 and 2 (pins 1 and 2 are connected).
Single diode loaded.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Table 6.
ESD maximum ratings
Symbol
Parameter
Conditions
Min
Max
Unit
V ESD
electrostatic discharge
IEC 61000-4-2
[1][2]
-
30
kV
voltage
(contact discharge)
machine model
MIL-STD-883
-
-
400
10
V
kV
(human body model)
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 3 to pins 1 and 2 (pins 1 and 2 are connected).
Table 7.
Standard
ESD standards compliance
Conditions
NUP1301_1
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3B (human body model)
> 15 kV (air); > 8 kV (contact)
> 8 kV
? NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 11 May 2009
3 of 13
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