- 您现在的位置：买卖IC网 > Datasheet目录238 > NUP2202W1T2G (ON Semiconductor)IC DIODE/TVS ARRAY HS SOT-363 Datasheet资料下载
参数资料
| 型号： | NUP2202W1T2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/8页 |
| 文件大小： | 0K |
| 描述： | IC DIODE/TVS ARRAY HS SOT-363 |
| 标准包装： | 1 |
| 电压 - 反向隔离（标准值）： | 5V |
| 电压 - 击穿： | 6V |
| 功率（瓦特）： | 500W |
| 电极标记： | 2 通道阵列 - 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SOT-363 |
| 包装： | 标准包装 |
| 其它名称： | NUP2202W1T2GOSDKR |
NUP2202W1
ELECTRICAL CHARACTERISTICS
(T A = 25 ° C unless otherwise noted)
Symbol Parameter
I PP
Maximum Reverse Peak Pulse Current
V C
Clamping Voltage @ I PP
I F
I
I R V F
V RWM
I R
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V RWM
V C V BR V RWM
I T
V
V BR
I T
Breakdown Voltage @ I T
Test Current
I F
V F
P pk
C
Forward Current
Forward Voltage @ I F
Peak Power Dissipation
Capacitance @ V R = 0 and f = 1.0 MHz
I PP
Uni ? Directional TVS
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (T J =25 ° C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
V RWM
V BR
I R
(Note 2)
I T = 1 mA, (Note 3)
V RWM = 5 V
6.0
5.0
5.0
V
V
m A
Clamping Voltage
Clamping Voltage
Maximum Peak Pulse Current
Junction Capacitance
Junction Capacitance
Clamping Voltage
V C
V C
I PP
C J
C J
V C
I PP = 5 A (Note 4)
I PP = 8 A (Note 4)
8x20 m s Waveform (Note 4)
V R = 0 V, f = 1 MHz between I/O Pins and GND
V R = 0 V, f = 1 MHz between I/O Pins
Per IEC 61000 ? 4 ? 2 (Note 6)
8.5
8.9
3.0
1.5
Figure 1 and 2
12.5
20
28
5.0
3.0
V
V
A
pF
pF
V
2. TVS devices are normally selected according to the working peak reverse voltage (V RWM ), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. V BR is measured at pulse test current I T .
4. Nonrepetitive current pulse per Figure 5 (Pin 5 to Pin 2).
5. Surge current waveform per Figure 5.
6. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000 ? 4 ? 2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000 ? 4 ? 2
http://onsemi.com
2
相关PDF资料 |
PDF描述 |
|---|---|
| NUP2301MW6T1 | IC TVS DIODE ARRAY 2LINE SC88 |
| NUP3112UPMUTAG | TVS QUAD ARRAY LOW CAP 6-UDFN |
| NUP3115UPMUTAG | TVS QUAD ARRAY LOW CAP 6-UDFN |
| NUP4000DR2G | TVS ARRAY BIDIR 400W 15V 8SOIC |
| NUP4004M5T1G | IC TVS ARRAY QUAD BIDIR 5TSOP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NUP2202W1T2G-CUT TAPE | 制造商:ON 功能描述:NUP2202W Series 20 V 5 pF Uni-Directional Transient Voltage Suppressor - SC-88 |
| NUP2301 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Low cap. diode array for 2 Line High Speed USB protection devic |
| NUP2301MW6T1 | 功能描述:整流器 Low Cap. for ESD RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| NUP2301MW6T1/D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Low Capacitance Diode Array for ESD Protection in Two Data Lines |
| NUP2301MW6T1D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Low Capacitance Diode Array for ESD Protection in Two Data Lines |
发布紧急采购，3分钟左右您将得到回复。