参数资料
型号: NUP4106DR2G
厂商: ON Semiconductor
文件页数: 2/7页
文件大小: 0K
描述: TVS LO CAP 500W 3.3V 8SOIC
标准包装: 2,500
电压 - 反向隔离(标准值): 3.3V
电压 - 击穿: 5V
功率(瓦特): 500W
电极标记: 4 通道阵列 - 双向
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOICN
包装: 带卷 (TR)
NUP4106
ELECTRICAL CHARACTERISTICS
Characteristic
Reverse Breakdown Voltage @ I t = 1.0 mA
Reverse Leakage Current @ V RWN = 3.3 V
Maximum Clamping Voltage @ I PP = 1.0 A, 8 x 20 m S
Maximum Clamping Voltage @ I PP = 10 A, 8 x 20 m S
Maximum Clamping Voltage @ I PP = 25 A, 8 x 20 m S
Between I/O Pins and Ground @ V R = 0 V, 1.0 MHz
Between I/O Pins @ V R = 0 Volts, 1.0 MHz
Symbol
V BR
I R
V C
V C
V C
Capacitance
Capacitance
Min
5.0
N/A
N/A
N/A
N/A
?
?
Typ
?
?
?
?
?
8.0
4.0
Max
?
5.0
7.0
10
15
15
?
Unit
V
m A
V
V
V
pF
pF
ELECTRICAL CHARACTERISTICS
(T A = 25 ° C unless otherwise noted)
Symbol Parameter
I PP
Maximum Reverse Peak Pulse Current
V C
Clamping Voltage @ I PP
I F
I
I R V F
V RWM
I R
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V RWM
V C V BR V RWM
I T
V
V BR
I T
Breakdown Voltage @ I T
Test Current
I F
V F
P pk
C
Forward Current
Forward Voltage @ I F
Peak Power Dissipation
Capacitance @ V R = 0 and f = 1.0 MHz
I PP
Uni ? Directional TVS
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
TYPICAL CHARACTERISTICS
100
90
80
70
60
50
40
30
20
10
t r
t P
PEAK VALUE I RSM @ 8 m s
PULSE WIDTH (t P ) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 m s
HALF VALUE I RSM /2 @ 20 m s
14
12
10
8
6
4
2
0
0
20
40
60
80
0
0
10
20
30
40
50
t, TIME ( m s)
Figure 1. 8 x 20 m s Pulse Waveform
PEAK PULSE CURRENT (A)
Figure 2. Clamping Voltage vs. Peak Pulse Current
(8 x 20 m s Waveform)
http://onsemi.com
2
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