参数资料
| 型号： | NUP4114UPXV6T1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/9页 |
| 文件大小： | 0K |
| 描述： | TVS ARRAY QUAD UNIDIR SOT-563 |
| 产品变化通告： | Wire Bond Change 01/Dec/2010 |
| 标准包装： | 4,000 |
| 电压 - 反向隔离（标准值）： | 5V |
| 电压 - 击穿： | 6V |
| 电极标记： | 4 通道阵列 - 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-563，SOT-666 |
| 供应商设备封装： | SOT-563 |
| 包装： | 带卷 (TR) |
NUP4114 Series, SZNUP4114HMR6T1G
ELECTRICAL CHARACTERISTICS
(T A = 25 ° C unless otherwise noted)
I
Symbol
I PP
V C
Parameter
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I PP
I F
I R V F
V RWM
I R
V BR
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V RWM
Breakdown Voltage @ I T
V C V BR V RWM
I T
V
I T
I F
Test Current
Forward Current
V F
P pk
C
Forward Voltage @ I F
Peak Power Dissipation
Capacitance @ V R = 0 and f = 1.0 MHz
I PP
Uni ? Directional TVS
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
V RWM
V BR
I R
V C
V C
(Note 1)
I T = 1 mA, (Note 2)
V RWM = 5.5 V
I PP = 5 A (Note 3)
I PP = 8 A (Note 3)
5.5
5.5
1.0
9.0
10
V
V
m A
V
V
Clamping Voltage
ESD Clamping Voltage
Maximum Peak Pulse Current
Junction Capacitance
Junction Capacitance
V C
V C
I PP
C J
C J
I PP = 1 A (Note 4)
Per IEC61000 ? 4 ? 2 (Note 5)
8x20 m s Waveform (Note 3)
V R = 0 V, f = 1 MHz between I/O Pins and GND
V R = 0 V, f = 1 MHz between I/O Pins
8.3
See Figures 1 & 2
10
12
0.6
0.3
V
A
pF
pF
1. TVS devices are normally selected according to the working peak reverse voltage (V RWM ), which should be equal or greater than the DC
or continuous peak operating voltage level.
2. V BR is measured at pulse test current I T .
3. Nonrepetitive current pulse (Pin 5 to Pin 2)
4. Nonrepetitive current pulse (I/O to GND).
5. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
6. Include SZ ? prefix devices where applicable.
Figure 1. ESD Clamping Voltage Screenshot
Positive 8 kV Contact per IEC61000 ? 4 ? 2
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000 ? 4 ? 2
http://onsemi.com
2
相关PDF资料 |
PDF描述 |
|---|---|
| EL5202IYZ-T7 | IC VFA DUAL 450MHZ SLEW 10-MSOP |
| EL5203ISZ-T7 | IC VFA DUAL 400MHZ SLEW 8-SOIC |
| MCP6054-E/SL | IC OPAMP R-R 1.8V 30UA 14-SOIC |
| NUP4114HMR6T1G | TVS ARRAY QUAD UNIDIR 6-TSOP |
| EL5167ICZ-T7 | IC AMP CFA SGL 1.4GHZ SC70-5 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NUP412VP5 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Low Capacitance Quad Array for ESD Protection |
| NUP412VP5T5G | 功能描述:TVS二极管阵列 LOW CAP ZR QD ARRY RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| NUP4201 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Low cap. diode array for 2 Line High Speed USB protection devic |
| NUP4201DR2 | 功能描述:TVS二极管阵列 Low Cap. TVS Array RoHS:否 制造商:Littelfuse 极性: 通道:4 Channels 击穿电压: 钳位电压:11.5 V 工作电压:2.5 V 峰值浪涌电流:20 A 安装风格:SMD/SMT 端接类型:SMD/SMT 系列: 最小工作温度:- 40 C 最大工作温度:+ 85 C |
| NUP4201DR2/D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Low Capacitance Surface Mount TVS for High Speed Data Interfaces |
发布紧急采购，3分钟左右您将得到回复。