参数资料
| 型号： | NUP412VP5T5G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | IC TVS ARRAY QUAD 12V ESD SOT953 |
| 产品变化通告： | Wire Bond Change 01/Dec/2010 |
| 标准包装： | 8,000 |
| 电压 - 反向隔离（标准值）： | 9V |
| 电压 - 击穿： | 11.4V |
| 功率（瓦特）： | 18W |
| 电极标记： | 4 通道阵列 - 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-953 |
| 供应商设备封装： | SOT-953 |
| 包装： | 带卷 (TR) |
| 其它名称： | NUP412VP5T5G-ND NUP412VP5T5GOSTR |
NUP412VP5
ELECTRICAL CHARACTERISTICS
(T A = 25 ° C unless otherwise noted)
Symbol Parameter
I PP
Maximum Reverse Peak Pulse Current
V C
Clamping Voltage @ I PP
I F
I
I R V F
V RWM
I R
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V RWM
V C V BR V RWM
I T
V
V BR
I T
Breakdown Voltage @ I T
Test Current
Q V BR
I F
V F
Z ZT
I ZK
Z ZK
Maximum Temperature Coefficient of V BR
Forward Current
Forward Voltage @ I F
Maximum Zener Impedance @ I ZT
Reverse Current
Maximum Zener Impedance @ I ZK
I PP
Uni ? Directional
MAXIMUM RATINGS (T A = 25 ° C unless otherwise noted)
Characteristic
Peak Power Dissipation (8 X 20 m s @ T A = 25 ° C) (Note 1)
Thermal Resistance Junction ? to ? Ambient
Above 25 ° C, Derate
Maximum Junction Temperature
Operating Junction and Storage Temperature Range
Lead Solder Temperature (10 seconds duration)
Human Body Model (HBM)
Machine Model (MM)
Symbol
P PK
R q JA
T Jmax
T J T stg
T L
ESD
Value
18
560
4.5
150
? 55 to +150
260
8000
400
Unit
W
° C/W
mW/ ° C
° C
° C
° C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Non ? repetitive current.
ELECTRICAL CHARACTERISTICS (T A = 25 ° C)
Device
Breakdown Voltage
V BR @ 5 mA (Volts)
Leakage Current
I RM @ V RM
Typ Capacitance
@ 0 V Bias (pF)
(Note 2)
Typ Capacitance
@ 3 V Bias (pF)
(Note 2)
Device
NUP412VP5 (Note 3)
Marking
2
Min
11.4
Nom
12
Max
12.7
V RWM
9.0
I RWM ( m A)
0.5
Typ
6.5
Max
10
Typ
3.5
Max
5.0
2. Capacitance of one diode at f = 1 MHz, T A = 25 ° C.
3. V BR at 5 mA.
http://onsemi.com
2
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