参数资料
型号: NUS2045MNT1G
厂商: ON Semiconductor
文件页数: 2/12页
文件大小: 0K
描述: IC OVP W/20V P-CH MOSFET DFN8
产品变化通告: Product Obsolescence 29/Oct/2010
标准包装: 1
电压 - 工作: 3 ~ 25V
电压 - 箝位: 7.08V
技术: 混合技术
功率(瓦特): 1W
电路数: 1
应用: 通用
封装/外壳: 8-VDFN 裸露焊盘
供应商设备封装: 8-DFN-EP(3.3x3.3)
包装: 剪切带 (CT)
其它名称: NUS2045MNT1GOSCT
NUS2045MN, NUS3045MN
Schottky
AC/DC Adapter of
Accessory Charger
IN
V CC
P?CH
Diode
Undervoltage
Lock Out
GATE
+
+
?
Logic
FET
Driver
OUT
C1
LOAD
V ref
NUSx045
GND
CNTRL
Microprocessor Port
Figure 1. Simplified Schematic
PIN FUNCTION DESCRIPTIONS
Pin #
1
2, 10
3
4, 9
5
6
7
8
Symbol
IN
GND
CNTRL
DRAIN
SRC
GATE
OUT
V CC
Pin Description
This pin senses an external voltage point. If the voltage on this input rises above the overvoltage threshold
(V TH ), the OUT pin will be driven to within 1.0 V of V CC , thus disconnecting the FET. The nominal threshold level
is 6.85 V and this threshold level can be increased with the addition of an external resistor between IN and V CC .
Circuit Ground
This logic signal is used to control the state of OUT and turn?on/off the P?channel MOSFET. A logic High
results in the OUT signal being driven to within 1.0 V of V CC which disconnects the FET. If this pin is not used,
the input should be connected to ground.
Drain pin of the power MOSFET
Source pin of the power MOSFET
Gate pin of the power MOSFET
This signal drives the gate of a P?channel MOSFET. It is controlled by the voltage level on IN or the logic state
of the CNTRL input. When an overvoltage event is detected, the OUT pin is driven to within 1.0 V of V CC in less
than 1.0 _sec provided that gate and stray capacitance is less than 12 nF.
Positive Voltage supply. If V CC falls below 2.8 V (nom), the OUT pin will be driven to within 1.0 V of V CC , thus
disconnecting the P?channel FET.
OVERVOLTAGE PROTECTION CIRCUIT TRUTH TABLE
IN
<V th
<V th
>V th
>V th
CNTRL
L
H
L
H
OUT
GND
V CC
V CC
V CC
http://onsemi.com
2
相关PDF资料
PDF描述
EL5224ILZ IC BUFFER 12MHZ R-R 8-CH 24-QFN
TA35-CBTWM040C0 CIRC BREAKER/WHITE ROCKER 2P 4A
25641801RP2 CONN RCPT 2MM VRT DUAL ROW 18POS
EL5427CRZ IC BUFFER RR 2.5MHZ 12CH 28TSSOP
25632001RP2 CONN RCPT 2MM VERT SGL ROW 20POS
相关代理商/技术参数
参数描述
NUS2401SNT1 功能描述:开关晶体管 - 偏压电阻器 200mA 50V Integrated RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel
NUS2401SNT1_06 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Integrated PNP/NPN Digital Transistors Array
NUS2401SNT1G 功能描述:开关晶体管 - 偏压电阻器 200mA 50V Integrated NPN/PNP RoHS:否 制造商:ON Semiconductor 配置: 晶体管极性:NPN/PNP 典型输入电阻器: 典型电阻器比率: 安装风格:SMD/SMT 封装 / 箱体: 直流集电极/Base Gain hfe Min:200 mA 最大工作频率: 集电极—发射极最大电压 VCEO:50 V 集电极连续电流:150 mA 峰值直流集电极电流: 功率耗散:200 mW 最大工作温度: 封装:Reel
NUS2501W6 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Integrated NPN Digital Transistor with Switching Transistor with Switching
NUS2501W6T1 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Integrated NPN Digital Transistor with Switching Transistor with Switching