参数资料
| 型号： | NUS3055MUTAG |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/10页 |
| 文件大小： | 0K |
| 描述： | IC OVP LOW PRO W/MOSFET 8-TLLGA |
| 产品变化通告： | Product Obsolescence 07/Jul/2010 |
| 标准包装： | 1 |
| 电压 - 工作： | 3 ~ 25V |
| 电压 - 箝位： | 7.08V |
| 技术： | 混合技术 |
| 电路数： | 1 |
| 应用： | 通用 |
| 封装/外壳： | 8-UFLGA |
| 供应商设备封装： | 8-LLGA（3x2.5） |
| 包装： | 剪切带 (CT) |
| 其它名称： | NUS3055MUTAGOSCT |
NUS3055MUTAG
MAXIMUM RATINGS (T A = 25 ° C unless otherwise stated)
Rating
OUT Voltage to GND
Input and CNTRL Pin Voltage to GND
V CC Maximum Range
Pin
7
1
3
8
?
Symbol
V O
V input
V CNTRL
V CC(max)
P D
Min
?0.3
?0.3
?0.3
?0.3
?
Max
30
30
13
30
1.0
Unit
V
V
V
W
Junction Temperature
Operating Ambient Temperature
V CNTRL Operating Voltage
Storage Temperature Range
OVP IC
P?Channel FET
?
?
?
3
?
1, 2, 3, 7, 8
R θ JA
T J
T A
?
T stg
?
?
?
?40
0
?65
2.5
342
124
150
85
5.0
150
?
° C/W
° C
° C
V
° C
kV
Drain?to?Source Voltage
V DSS
?30
V
Gate?to?Source Voltage
Continuous Drain Current, Steady State, T A = 25 ° C (Note 1)
V GS
I D
?20
20
?1.0
V
A
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface?mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
2. Human body model (HBM): MIL STD 883C Method 3015?7, (R = 1500 W , C = 100 pF, F = 3 pulses delay 1 s).
http://onsemi.com
3
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