- 您现在的位置：买卖IC网 > PDF目录18140 > NVMFD5877NLT3G (ON Semiconductor)MOSFET N-CH 60V 17A 8SOIC FL PDF资料下载
参数资料
| 型号： | NVMFD5877NLT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 17A 8SOIC FL |
| 标准包装： | 5,000 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 17A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 39 毫欧 @ 7.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5.9nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 540pF @ 25V |
| 功率 - 最大： | 3.2W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-PowerTDFN |
| 供应商设备封装： | 8-DFN（5x6） |
| 包装： | 带卷 (TR) |
NVMFD5877NL, NVMFD5877NLWF
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
60
53
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 60 V
T J = 25 ° C
T J = 125 ° C
1.0
10
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.0
3.5
3.0
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 10 V
I D = 7.5 A
31
39
m W
V GS = 4.5 V
I D = 7.5 A
42
60
Forward Transconductance
g FS
V DS = 15 V, I D = 5.0 A
7.0
S
CHARGES AND CAPACITANCES
Input Capacitance
C iss
540
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V GS = 0 V, f = 1.0 MHz, V DS = 25 V
55
36
Total Gate Charge
Q G(TOT)
5.9
nC
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
V GS = 4.5 V, V DS = 48 V,
I D = 5.0 A
0.62
1.64
2.80
Total Gate Charge
Q G(TOT)
V GS = 10 V, V DS = 48V, I D = 5.0A
11
20
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn ? On Delay Time
t d(on)
8.1
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 4.5 V, V DS = 48 V,
I D = 5.0 A, R G = 2.5 W
15.8
11.8
3.9
Turn ? On Delay Time
t d(on)
4.9
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 10 V, V DS = 48 V,
I D = 5.0 A, R G = 2.5 W
6.4
14.5
2.4
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 5.0 A
T J = 25 ° C
T J = 125 ° C
0.8
0.7
1.2
V
Reverse Recovery Time
t RR
14.5
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V, d IS /d t = 100 A/ m s,
I S = 5.0 A
11.5
3.1
Reverse Recovery Charge
Q RR
11
nC
PACKAGE PARASITIC VALUES
Source Inductance
L S
0.93
nH
Drain Inductance
Gate Inductance
L D
L G
T A = 25 ° C
0.005
1.84
Gate Resistance
R G
1.5
W
5. Pulse Test: pulse width = 300 m s, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
相关PDF资料 |
PDF描述 |
|---|---|
| B22EB | SW TOGGLE DPDT .4VA STR BRKT ESD |
| PE870106 | POWER ENTRY FILTERED 6A SCREW |
| B221J60ZQ2 | SWITCH ROCKER DPDT 6A 125V |
| B32537B8473K | FILM CAP 47NF 10% 630V |
| B32523Q1475K289 | FILM CAP 4.7UF 10% 100V |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NVMFD5877NLWF | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:60 V, 39 m, 17 A, Dual Na??Channel, Logic Level, Dual SO8FL |
| NVMFD5877NLWFT1G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:60 V, 39 m, 17 A, Dual Na??Channel, Logic Level, Dual SO8FL |
| NVMFD5877NLWFT3G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:60 V, 39 m, 17 A, Dual Na??Channel, Logic Level, Dual SO8FL |
| NVMFS4841NT1G | 功能描述:MOSFET Single N-Channel 30V,89A,7mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NVMFS4841NT3G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30V, 7 m, 89A, Single N?Channel SO8FL |
发布紧急采购，3分钟左右您将得到回复。